Semiconductor device

Patent metadata

Field	Value
Publication number	US-9349800-B2
Application number	US-201514825235-A
Country	US
Kind code	B2
Filing date	Aug 13, 2015
Priority date	Nov 28, 2012
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first diamond semiconductor layer of a first conductivity type including a principal surface having a first plane orientation;
a trench structure formed in the first diamond semiconductor layer;
a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer;
a first electrode electrically connected to the first diamond semiconductor layer; and
a second electrode electrically connected to the second diamond semiconductor layer.

2. The device according to claim 1 , wherein the first conductivity type is an n-type.

3. The device according to claim 1 , wherein the first plane orientation has a slope of 45° or less in a <011> direction from a {111} plane.

4. The device according to claim 3 , wherein a plane orientation of an interface between the first diamond semiconductor layer and the second diamond semiconductor layer is within ±10° from a {100} plane or a {110} plane.

5. The device according to claim 1 , wherein the second diamond semiconductor layer has a dopant concentration of 1×10 15 atoms/cm 3 or less.

Assignees

• Toshiba Kk

Inventors

• Suzuki Mariko
• Sakai Tadashi
• Sakuma Naoshi
• Katagiri Masayuki
• Yamazaki Yuichi

Classifications

• H10P95/92

  Formation of n- or p-type semiconductors, e.g. doping of graphene · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title