SiC devices with high blocking voltage terminated by a negative bevel

Patent metadata

Field	Value
Publication number	US-9349797-B2
Application number	US-201213366658-A
Country	US
Kind code	B2
Filing date	Feb 6, 2012
Priority date	May 16, 2011
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the semiconductor device has a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeter squared (mΩ·cm 2 ) and even more preferably less than 5 mΩ·cm 2 . In another embodiment, the semiconductor device has a blocking voltage of at least 15 kV and an on-resistance of less than 15 mΩ·cm 2 and even more preferably less than 7 mΩ·cm 2 . In yet another embodiment, the semiconductor device has a blocking voltage of at least 20 kV and an on-resistance of less than 20 mΩ·cm 2 and even more preferably less than 10 mΩ·cm 2 . The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), or a PIN diode.

First claim

What is claimed is:

1. A Silicon Carbide (SiC) semiconductor device having a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeters squared (mΩ·cm 2 ).

2. The SiC semiconductor device of claim 1 wherein the SiC semiconductor device is a Bipolar Junction Transistor (BJT).

3. The SiC semiconductor device of claim 1 , wherein the on-resistance is a differential on-resistance.

4. The SiC semiconductor device of claim 3 wherein the differential on-resistance is less than 5 mΩ·cm 2 .

5. The SiC semiconductor device of claim 3 wherein the blocking voltage is in a range of and including 10 kV and 15 kV.

6. The SiC semiconductor device of claim 5 wherein the differential on-resistance is less than 5 mΩ·cm 2 .

7. The SiC semiconductor device of claim 3 comprising a multi-step negative bevel edge termination that approximates a smooth slope.

8. The SiC semiconductor device of claim 7 wherein the multi-step negative bevel edge termination includes at least five steps.

9. The SiC semiconductor device of claim 7 wherein the multi-step negative bevel edge termination includes at least ten steps.

10. The SiC semiconductor device of claim 7 wherein the multi-step negative bevel edge termination includes at least fifteen steps.

11. The SiC semiconductor device of claim 7 wherein the blocking voltage of the SiC semiconductor device is in a range of and including 10 to 25 kV.

12. The SiC semiconductor device of claim 7 wherein the blocking voltage of the SiC semiconductor device is in a range of and including 12 to 25 kV.

13. The SiC semiconductor device of claim 7 wherein a slope angle of the multi-step negative bevel edge termination is less than or equal to 15 degrees.

14. The SiC semiconductor device of claim 7 wherein the SiC semiconductor device is a thyristor comprising:
a substrate of a first conductivity type;
a drift layer of a second conductivity type on a surface of the substrate;
a base layer of the first conductivity type on a surface of the drift layer opposite the substrate;
an anode mesa of the second conductivity type on a surface of the base layer opposite the drift layer; and
a gate region formed in the surface of the base layer;
wherein the multi-step negative bevel edge termination is formed in the base layer adjacent to the gate region opposite the anode mesa.

15. The SiC semiconductor device of claim 5 wherein the SiC semiconductor device is a PIN diode comprising:
a substrate of a first conductivity type;
a drift layer of the first conductivity type on a surface of the substrate;
a semiconductor layer of a second conductivity type on a surface of the drift layer opposite the substrate;
an anode mesa on a surface of the semiconductor layer of the second conductivity type opposite the drift layer;
an anode contact on a surface of the anode mesa opposite the drift layer; and
a cathode contact on a surface of the substrate opposite the drift layer;
wherein the multi-step negative bevel edge termination is formed in the semiconductor layer of the second conductivity type adjacent to the anode mesa.

16. The SiC semiconductor device of claim 3 wherein the SiC semiconductor device is one of a group consisting of: a thyristor, an Insulated Gate Bipolar Transistor (IGBT), and a PIN diode.

17. The SiC semiconductor device of claim 1 comprising a multi-step negative bevel edge termination that approximates a smooth slope.

18. The SiC semiconductor device of claim 17 wherein the SiC semiconductor device is a Bipolar Junction Transistor (BJT) comprising:
a substrate of a first conductivity type;
a drift layer of the first conductivity type on a surface of the substrate;
a base layer of a second conductivity type on a surface of the drift layer opposite the substrate;
a base region of the second conductivity type formed in a surface of the base layer opposite the drift layer; and
an emitter mesa on the surface of the base layer opposite the drift layer and adjacent to the base region;
wherein the multi-step negative bevel edge termination is formed in the base layer adjacent to the base region opposite the emitter mesa.

19. The SiC semiconductor device of claim 17 wherein the SiC semiconductor device is a Bipolar Junction Transistor (BJT) comprising:
a substrate of a first conductivity type;
a drift layer of a second conductivity type on a surface of the substrate;
a base layer of the first conductivity type on a surface of the drift layer opposite the substrate;
an emitter region of the second conductivity type on a surface of the base layer opposite the drift layer; and
a gate trench formed in a surface of the BJT adjacent to the emitter region and extending into the drift layer;
wherein the multi-step negative bevel edge termination is formed in the base layer adjacent to the emitter region opposite the gate trench.

20. A Silicon Carbide (SiC) semiconductor device having a blocking voltage of at least 15 kilovolts (kV) and an on-resistance of less than 15 milli-ohms centimeters squared (mΩ·cm 2 ).

21. The SiC semiconductor device of claim 20 , whereinthe on-resistance is a differential on-resistance.

22. The SiC semiconductor device of claim 21 wherein the differential on-resistance is less than 7 mΩ·cm 2 .

23. The SiC semiconductor device of claim 21 wherein the blocking voltage is in a range of and including 15 kV and 20 kV.

24. The SiC semiconductor device of claim 23 wherein the differential on-resistance is less than 7 mΩ·cm 2 .

25. The SiC semiconductor device of claim 21 comprising a multi-step negative bevel edge termination that approximates a smooth slope.

26. A Silicon Carbide (SiC) semiconductor device having a blocking voltage of at least 20 kilovolts (kV) and an on-resistance of less than 20 milli-ohms centimeters squared (mΩ·cm 2 ).

27. The SiC semiconductor device of claim 26 , wherein the on-resistance is a differential on-resistance.

28. The SiC semiconductor device of claim 27 wherein the differential on-resistance is less than 10 mΩ·cm 2 .

29. The SiC semiconductor device of claim 27 wherein the blocking voltage is in a range of and including 20 kV and 25 kV.

30. The SiC semiconductor device of claim 29 wherein the differential on-resistance is less than 10 mΩ·cm 2 .

31. The SiC semiconductor device of claim 27 comprising a multi-step negative bevel edge termination that approximates a smooth slope.

Assignees

• Cheng Lin
• Agarwal Anant K
• O'Loughlin Michael John
• Burk Jr Albert Augustus
• Palmour John Williams
• Cree Inc

Inventors

• Cheng Lin
• Agarwal Anant K
• O'Loughlin Michael John
• Burk Jr Albert Augustus
• Palmour John Williams

Classifications

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/105

  by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  (IGFETs having LDD or drain extension regions H10D30/601) · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D62/199

  Anode base regions of thyristors · CPC title