Semiconductor device and display device

Patent metadata

Field	Value
Publication number	US-9349750-B2
Application number	US-201314077390-A
Country	US
Kind code	B2
Filing date	Nov 12, 2013
Priority date	Nov 16, 2012
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

First claim

What is claimed is:

1. A display device comprising:
a transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer over the gate insulating film; and
a source electrode and a drain electrode over the semiconductor layer;

a first insulating film comprising an inorganic material over the transistor;
a second insulating film comprising an organic material over the first insulating film;
a first conductive film located over the second insulating film and overlapping with the semiconductor layer;
a pixel electrode over the second insulating film, the pixel electrode electrically connected to the first conductive film;
a third insulating film comprising an inorganic material over the first conductive film and the pixel electrode;
a second conductive film located over the third insulating film and overlapping with the first conductive film;
a common electrode over the third insulating film, the common electrode electrically connected to the second conductive film;
an electrode electrically connected to the common electrode through an opening provided in the gate insulating film, the first insulating film, and the second insulating film; and
a liquid crystal layer over the second conductive film and the common electrode.

2. The display device according to claim 1 , wherein the semiconductor layer is an oxide semiconductor layer.

3. The display device according to claim 1 , wherein the transistor is provided in a driver circuit portion of the display device.

4. The display device according to claim 2 , wherein the oxide semiconductor layer comprises at least one oxide selected from the group consisting of indium oxide, tin oxide, and zinc oxide.

5. The display device according to claim 2 , wherein the oxide semiconductor layer is an In—Ga—Zn-based oxide semiconductor layer.

6. The display device according to claim 2 ,
wherein the oxide semiconductor layer comprises a crystal part, and
wherein a c-axis of the crystal part is parallel to a normal vector of a surface where the oxide semiconductor layer is formed.

Assignees

• Miyake Hiroyuki
• Yamazaki Shunpei
• Tanada Yoshifumi
• Sato Manabu
• Sasaki Toshinari
• Okazaki Kenichi
• Koezuka Junichi
• Matsuo Takuya
• Matsukizono Hiroshi
• Kanzaki Yosuke
• Mori Shigeyasu
• Semiconductor Energy Lab
• Sharp Kk

Inventors

• Miyake Hiroyuki
• Yamazaki Shunpei
• Tanada Yoshifumi
• Sato Manabu
• Sasaki Toshinari
• Okazaki Kenichi
• Koezuka Junichi
• Matsuo Takuya
• Matsukizono Hiroshi
• Kanzaki Yosuke
• Mori Shigeyasu

Classifications

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60 Primary

  wherein the TFTs are in active matrices · CPC title

• H01L27/124

  Electricity · mapped topic