Method for fabricating patterned gradient heat sinks
US-2015013946-A1 · Jan 15, 2015 · US
US9349402B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9349402-B2 |
| Application number | US-201514618992-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2015 |
| Priority date | Jul 9, 2013 |
| Publication date | May 24, 2016 |
| Grant date | May 24, 2016 |
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Provided herein is an apparatus comprising a substrate; a continuous layer over the substrate comprising a first heat sink layer; and a plurality of features over the continuous layer comprising a second heat sink layer, a first magnetic layer over the second heat sink layer, and a second magnetic layer, wherein the first and second magnetic layers are configured to provide a temperature-dependent, exchange spring mechanism.
Opening claim text (preview).
What is claimed is: 1. An apparatus comprising a substrate; a continuous layer over the substrate comprising a continuous first heat sink layer; and a plurality of patterned features over the continuous layer, wherein each of the patterned features includes a patterned second heat sink layer, a patterned first magnetic layer overlying the patterned second heat sink layer, and a patterned second magnetic layer, wherein the patterned first and second magnetic layers are configured to provide a temperature-dependent, exchange spring mechanism. 2. The apparatus of claim 1 , wherein the exchange spring mechanism is effected by the patterned first and second magnetic layers being more strongly coupled at a first temperature than at a second, higher temperature. 3. The apparatus of claim 2 , wherein the second, higher temperature facilitates a magnetization change in one or more of the plurality of patterned features by a read/write head. 4. The apparatus of claim 1 , wherein the continuous first heat sink layer has a higher thermal conductivity than the patterned second heat sink layer. 5. The apparatus of claim 1 , wherein the patterned first magnetic layer has a higher anisotropy field H k than the patterned second magnetic layer. 6. The apparatus of claim 1 , wherein the patterned first magnetic layer has a lower saturation magnetization M s than the patterned second magnetic layer. 7. The apparatus of claim 1 , wherein the patterned first magnetic layer has a lower Curie temperature T c than the patterned second magnetic layer. 8. An apparatus comprising a patterned layer over a continuous first heat sink layer, wherein the patterned layer includes a patterned island comprising a patterned second heat sink layer, a patterned first magnetic layer overlying the patterned second heat sink layer, and a patterned second magnetic layer, wherein the patterned first and second magnetic layers are configured to provide a temperature-dependent, exchange spring mechanism. 9. The apparatus of claim 8 , wherein the exchange spring mechanism is effected by the patterned first and second magnetic layers being more weakly coupled at a first temperature than at a second, lower temperature. 10. The apparatus of claim 8 , wherein the continuous first heat sink layer has a higher thermal conductivity than the patterned second heat sink layer. 11. The apparatus of claim 10 , wherein the patterned first magnetic layer has a higher anisotropy field H k than the patterned second magnetic layer. 12. The apparatus of claim 10 , wherein the patterned first magnetic layer has a lower saturation magnetization M s than the patterned second magnetic layer. 13. The apparatus of claim 10 , wherein the patterned first magnetic layer has a lower Curie temperature T c than the patterned second magnetic layer. 14. The apparatus of claim 8 , further comprising a thermal resistor layer in-between the patterned second heat sink layer and the patterned first magnetic layer. 15. An apparatus comprising a plurality of patterned features comprising a patterned first magnetic layer, a patterned second magnetic layer overlying the patterned first magnetic layer, and a patterned third magnetic layer over the patterned second magnetic layer, wherein the patterned first, second, and third magnetic layers are configured to provide a temperature-dependent, exchange spring mechanism, a continuous first heat sink layer, and a patterned second heat sink layer in-between the continuous first heat sink layer and the patterned first magnetic layer, wherein the patterned second heat sink layer is a thermally conductive material directly underlying each of the plurality of patterned features. 16. The apparatus of claim 15 , wherein the patterned first magnetic layer has a higher anisotropy field H k than the patterned third magnetic layer, and wherein the patterned third magnetic layer has a higher H k than the patterned second magnetic layer. 17. The apparatus of claim 15 , wherein each of the patterned first and third magnetic layers has a lower saturation magnetization M s than the patterned second magnetic layer. 18. The apparatus of claim 15 , wherein each of the patterned first and third magnetic layers has a lower Curie temperature T c than the patterned second magnetic layer. 19. The apparatus of claim 15 , wherein the continuous first heat sink layer has a higher thermal conductivity than the patterned second heat sink layer.
Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit · CPC title
manufacturing base layers · CPC title
Coating only part of a support with a magnetic layer · CPC title
the record carriers consisting of several layers · CPC title
Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal · CPC title
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