Bandgap reference circuit

Patent metadata

Field	Value
Publication number	US-9348352-B2
Application number	US-201414164259-A
Country	US
Kind code	B2
Filing date	Jan 27, 2014
Priority date	May 17, 2013
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A bandgap reference circuit is provided and which includes an operating voltage, a current mirror, a first p-channel metal-oxide semiconductor (PMOS) transistor and an amplifier. The current mirror is coupled to the operating voltage. The first PMOS transistor is coupled to the operating voltage and the current mirror. The amplifier is coupled to the current mirror and the first PMOS transistor. When the bandgap reference circuit is activated, the operating voltage starts to supply voltage such that the first PMOS transistor is turned on first. When the operating voltage is higher than a preset voltage level, the first PMOS transistor is turned off, in order to complete an start-up process.

First claim

What is claimed is:

1. A bandgap reference circuit, comprising:
an operating voltage;
a current mirror coupled to the operating voltage, wherein the current mirror comprises:
a second PMOS transistor having a gate coupled to a source of the first PMOS transistor, and a source coupled to the operating voltage and a gate of the first PMOS transistor; and
a third PMOS transistor having a gate coupled to the gate of the second PMOS transistor and the source of the first PMOS tran…

Assignees

• Upi Semiconductor Corp

Inventors

• Lin Wen-Sheng

Classifications

• G05F3/20

  Physics · mapped topic

• G05F3/26

  Physics · mapped topic

• G05F3/30

  Physics · mapped topic

• G05F3/08 Primary

  Physics · mapped topic