Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method

Patent metadata

Field	Value
Publication number	US-9348217-B2
Application number	US-201314348349-A
Country	US
Kind code	B2
Filing date	Mar 28, 2013
Priority date	Mar 30, 2012
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA 70 −BA 30 )/(BD 70 −BD 30 )≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA 30 is defined as a bearing area of 30%, BA 70 is defined as a bearing area of 70%, and BD 70 and BD 30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

First claim

The invention claimed is:

1. A mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA 70 −BA 30 )/(BD 70 −BD 30 )≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA 30 is defined as a bearing area of 30%, BA 70 is defined as a bearing area of 70%, and BD 70 and BD 30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

2. The mask blank substrate according to claim 1 , wherein the main surface is a surface such that, in a frequency distribution plotting a relation between the bearing depth, measured with the atomic force microscope, and a frequency (%) of the obtained bearing depth, the absolute value of the bearing depth corresponding to the center of a half-value width obtained from an approximation curve obtained by the plotted points or the highest frequency at the plotted points is smaller than the absolute value of the bearing depth corresponding to ½ of a maximum height (Rmax) of the surface roughness of the main surface of the substrate.

3. The mask blank substrate according to claim 1 wherein the main surface is subjected to a surface treatment with catalyst-referred etching.

4. The mask blank substrate according to claim 1 , wherein the mask blank substrate is used in EUV lithography.

5. The mask blank substrate according to claim 4 , wherein a thin film of a material comprising a metal, an alloy, or at least one of oxygen, nitrogen and carbon contained in one of the metal and the alloy, is formed on the main surface of a substrate of multi-component glass.

6. A substrate with a multilayer reflective film comprising a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on the main surface of the mask blank substrate according to claim 1 .

7. The substrate with a multilayer reflective film according to claim 6 , wherein the substrate with a multilayer reflective film has a protective film on the multilayer reflective film.

8. A reflective mask blank comprising an absorber film to be a transfer pattern on the protective film of the substrate with a multilayer reflective film according to claim 7 .

9. A transmissive mask blank comprising a light shielding function film to be a transfer pattern on the main surface of the mask blank substrate according to claim 1 .

10. A transmissive mask comprising a light shielding function film pattern provided on the main surface by patterning the light shielding function film of the transmissive mask blank according to claim 9 .

11. A method of manufacturing a semiconductor device, comprising a step of forming a transfer pattern on a transferred substrate using the transmissive mask according to claim 10 by performing a lithography process using an exposure device.

12. A substrate with a multilayer reflective film for use in lithography, the substrate with a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on the main surface of the mask blank substrate,
wherein a main surface of the substrate satisfies a relational equation of (BA 70 −BA 30 )/(BD 70 −BD 30 )≧230 (%/nm), and has a maximum height (Rmax)≦1.5 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA 30 is defined as a bearing area of 30%, BA 70 is defined as a bearing area of 70%, and BD 70 and BD 30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

13. A reflective mask blank comprising an absorber film to be a transfer pattern on the multilayer reflective film of the substrate with a multilayer reflective film according to claim 12 .

14. A reflective mask comprising an absorber pattern provided on the multilayer reflective film by patterning the absorber film of the reflective mask blank according to claim 13 .

15. A method of manufacturing a semiconductor device, comprising a step of forming a transfer pattern on a transferred substrate using the reflective mask according to claim 14 by performing a lithography process using an exposure device.

Assignees

• Hoya Corp

Inventors

• Hamamoto Kazuhiro
• Orihara Toshihiko
• Kozakai Hirofumi
• Usui Youichi
• Shoki Tsutomu
• Horikawa Junichi

Classifications

• H10P76/408

  characterised by their sizes, orientations, dispositions, behaviours or shapes · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• G03F1/22 Primary

  Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F1/50 Primary

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title