Method of manufacturing retarder

US9348077B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9348077-B2
Application numberUS-201113287244-A
CountryUS
Kind codeB2
Filing dateNov 2, 2011
Priority dateDec 23, 2010
Publication dateMay 24, 2016
Grant dateMay 24, 2016

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  1. Title

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of manufacturing a patterned retarder includes forming a retarder material layer by applying a retarder material to a substrate; drying the retarder material layer at a first temperature; exposing the retarder material layer to linearly-polarized UV, wherein the retarder material layer has an optical anisotropic property; and heat treating the retarder material layer at a second temperature higher than the first temperature to increase the optical anisotropic property of the retarder material layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a patterned retarder, comprising: forming a single retarder material layer by applying a retarder material to a substrate; drying the single retarder material layer at a first temperature; exposing the single retarder material layer to linearly-polarized UV, wherein the single retarder material layer has an optical anisotropic property; heat treating the single retarder material layer at a second temperature higher than the first temperature to increase the optical anisotropic property of the single retarder material layer, and dividing the patterned retarder into unit patterned retarders by cutting the patterned retarder using a laser beam, wherein exposing the single retarder material layer to the linearly-polarized UV includes irradiating first polarized UV to the single retarder material layer and irradiating second polarized UV to the single retarder material layer, wherein the first polarized UV is irradiated to all over the single retarder material layer, and the second polarized UV is irradiated to the single retarder material layer through a mask including light-transmitting portions and light-blocking portions, which alternate each other, wherein an energy of the second polarized UV is larger than an energy of the first polarized UV, wherein the retarder material includes a photosensitive group, which shows the optical anisotropic property when the linearly-polarized light is exposed thereto, and a liquid crystal polymer, a liquid crystal monomer, an oligomer or a mixture thereof having a mesogen group, which shows a liquid crystal property within a range of predetermined temperatures, wherein the linearly-polarized UV has an energy of 60 mJ/cm 2 to 400 mJ/cm 2 and a wavelength of 280 nm to 340 nm, wherein heat treating the single retarder material layer is performed through a thermal radiation or thermal convection phenomenon using a far infrared heater or an oven and is carried out under the temperature of 80 degrees Celsius to 150 degrees Celsius for 30 seconds to 30 minutes, and wherein the single retarder material layer exposed to the linearly-polarized UV and heat treated has a retardation value between 112 nm and 128 nm. 2. The method according to claim 1 , wherein the retarder material further includes a leveling additive agent for flattening. 3. The method according to claim 1 , wherein the single retarder material layer exposed to the linearly-polarized UV has a retardation axis, and the retardation axis is perpendicular to a polarization axis of the linearly-polarized UV. 4. The method according to claim 3 , wherein the single retarder material layer exposed to the linearly-polarized UV includes first and second phase patterns having different retardation axes. 5. The method according to claim 4 , wherein irradiating the first polarized UV is performed before irradiating the second polarized UV, and the energy of the second polarized UV is 1.5 to 10 times as large as the energy of the first polarized UV. 6. The method according to claim 4 , wherein irradiating the second polarized UV is performed before irradiating the first polarized UV, and the energy of the first polarized UV is 0.1 to 0.9 times as small as the energy of the second polarized UV. 7. The method according to claim 1 , wherein forming the single retarder material layer uses one of a spin-coating method, a slit-coating method, a doctor blade method, a spin and slit coating method, a roll-to-roll coating method and a cast coating method, and the single retarder material layer has a thickness less than 5 micrometers. 8. The method according to claim 1 , wherein the substrate includes one of glass, plastic, polymethyl methacrylate, polycarbonate, polyvinyl chloride, triacetyl cellulose and cyclo olefin polymer. 9. The method according to claim 1 , wherein drying the single retarder material layer is performed through a thermal radiation or thermal convection phenomenon using the far infrared heater or the oven and is carried out under the temperature of 25 degrees Celsius to 80 degrees Celsius for 30 seconds to 30 minutes. 10. The method according to claim 1 , further comprising: forming an antireflection layer or attaching an antireflection film to each unit patterned retarder.

Assignees

Inventors

Classifications

  • using polarisation techniques · CPC title

  • G02B5/3083Primary

    Birefringent or phase retarding elements (G02B5/3008, G02B5/3016 take precedence; systems for polarisation control G02B27/286; manufacturing phase modulating patterns by lithographic processes G03F7/001) · CPC title

  • Physics · mapped topic

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What does patent US9348077B2 cover?
A method of manufacturing a patterned retarder includes forming a retarder material layer by applying a retarder material to a substrate; drying the retarder material layer at a first temperature; exposing the retarder material layer to linearly-polarized UV, wherein the retarder material layer has an optical anisotropic property; and heat treating the retarder material layer at a second temper…
Who is the assignee on this patent?
Lee Su-Bin, Park Su-Hyun, Lee Sang-Wook, and 3 more
What technology area does this patent fall under?
Primary CPC classification G02B5/3083. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).