Method of depositing a ruthenium metal thin film or ruthenium oxide thin film

Patent metadata

Field	Value
Publication number	US-9347133-B2
Application number	US-201214351930-A
Country	US
Kind code	B2
Filing date	Mar 30, 2012
Priority date	Oct 20, 2011
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A method of depositing a ruthenium metal thin film or ruthenium oxide thin film comprising a ruthenium compound used for depositing metallic Ru or RuO 2 thin film on a substrate via atomic layer deposition, and the ruthenium compound represented by Chemical Formula 1, wherein L is a ligand selected from the group consisting of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene, and isoprene.

First claim

The invention claimed is:

1. A method of depositing a ruthenium (Ru) metal thin film or ruthenium oxide (RuO 2 ) thin film comprising:
a ruthenium compound used for depositing metallic Ru or RuO 2 thin film on a substrate via atomic layer deposition,
wherein the ruthenium compound represented by Chemical Formula 1:

wherein L is a ligand selected from the group consisting of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene, and isoprene.

2. The method of claim 1 , wherein the ruthenium compound is transferred to the substrate as a gas phase by using a method selected from the group consisting of a vaporization technique by heating the ruthenium compound in the range of 50° C. to 120° C., a liquid transfer technique by direct liquid injection (DLI), and a technique by dissolving the ruthenium compound in an organic solvent.

3. The method of claim 2 , wherein the method is performed using atomic layer deposition comprising 4 steps from (a) to (d) as one cycle:
(a) introducing a precursor into a chamber as the gas phase using a transfer gas or a diluent gas selected from the group consisting of argon (Ar), nitrogen (N 2 ), and helium (He);
forming a precursor layer on the substrate by adsorbing the precursor onto the substrate;
providing a time period of less than 1 minute during which the precursor layer is formed on the substrate;
(b) removing excessive precursor that was not adsorbed onto the substrate by using an inert gas selected from the group consisting of argon (Ar), nitrogen (N 2 ), and helium (He);
providing a time period of less than 1 minute during which the excessive precursor is removed;
(c) introducing one of reaction gases or any mixture of the reaction gases selected from the group consisting of hydrogen (H 2 ), ammonia (NH 3 ), hydrazine (N 2 H 4 ), water vapor (H 2 O), ozone (O 3 ), and oxygen (O 2 ) into the chamber to form a ruthenium metal layer or a ruthenium oxide layer on the substrate;
forming a ruthenium metal thin film or a ruthenium oxide thin film and by-products by reacting the reaction gas with the precursor layer formed on the substrate for 1 minute or less; and
(d) introducing the inert gas selected from the group consisting of argon (Ar), nitrogen (N 2 ), and helium (He) into the chamber for 1 minute or less in order to remove excessive reaction gas and the by-products.

4. The method of claim 1 , wherein the substrate temperature is in the range of 200° C. to 350° C.

5. The method of claim 1 , wherein a reaction gas for depositing the ruthenium oxide thin film on the substrate comprises one selected from the group consisting of water vapor (H 2 O), oxygen (O 2 ), and ozone (O 3 ).

6. The method of claim 1 , wherein a reaction gas for depositing the ruthenium metal thin film on the substrate comprises one selected from the group consisting of hydrogen (H 2 ), ammonia (NH 3 ), hydrazine (N 2 H 4 ), ozone (O 3 ), and oxygen (O 2 ).

Assignees

• Park Jung Woo
• Kim Jun Young
• Lee Kwang Deok
• Jin Whee Won
• Hansol Chemical Co Ltd

Inventors

• Park Jung Woo
• Kim Jun Young
• Lee Kwang Deok
• Jin Whee Won

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F17/02

  of metals of Groups 8, 9 or 10 of the Periodic Table · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C01G55/00

  Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum · CPC title

• C23C16/06 Primary

  characterised by the deposition of metallic material · CPC title