Lanthanum target for sputtering

US9347130B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9347130-B2
Application numberUS-201013147837-A
CountryUS
Kind codeB2
Filing dateMar 17, 2010
Priority dateMar 27, 2009
Publication dateMay 24, 2016
Grant dateMay 24, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering that has no spotty macro patterns on the surface, and a method of producing the same.

First claim

Opening claim text (preview).

The invention claimed is: 1. A lanthanum metal target for sputtering having a purity excluding gas components of 3N or higher, a Vickers hardness of HV60 or more, and a non-recrystallized structure with no spotty macro patterns on a surface of the target. 2. The lanthanum metal target for sputtering according to claim 1 , wherein the target consists of lanthanum metal of a purity excluding gas components of 4N or higher. 3. The lanthanum metal target for sputtering according to claim 1 , further comprising a copper-chromium alloy backing plate diffusion bonded to the lanthanum metal target. 4. A method of producing a lanthanum metal target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target having a purity excluding gas components of 3N or higher, a Vickers hardness of HV60 or more, and a non-recrystallized structure with no spotty macro patterns on a surface of the target.

Assignees

Inventors

Classifications

  • Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor {(non-ferrous ingots B22D7/005)} · CPC title

  • of other metals or alloys based thereon · CPC title

  • Oxides (C23C14/10 takes precedence) · CPC title

  • Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

  • Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00 · CPC title

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What does patent US9347130B2 cover?
Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form th…
Who is the assignee on this patent?
Tsukamoto Shiro, Otsuki Tomio, Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).