Materials and methods for the preparation of nanocomposites

Patent metadata

Field	Value
Publication number	US-9346998-B2
Application number	US-201013266079-A
Country	US
Kind code	B2
Filing date	Apr 23, 2010
Priority date	Apr 23, 2009
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

First claim

What is claimed is:

1. An isolable colloidal particle comprising an inorganic capping agent comprising a Zintl ion, said inorganic capping agent bound to a surface of a nanoparticle and substantially free of an organic capping agent.

2. The particle of claim 1 , wherein the inorganic capping agent is selected from a group consisting of a polyatomic anion, a soluble metal chalcogenide, a soluble polyatomic metal chalcogenide anion, and a mixture thereof.

3. The particle of claim 1 , wherein the inorganic capping agent further comprises an ion selected from the group consisting of As 3 3− , As 4 2− , As 5 3− , As 7 3− , As 11 3− , AsS 3 3− , As 2 Se 6 3− , As 2 Te 6 3− , As 10 Te 3 2− , Au 2 Te 4 2− , Au 3 Te 4 3− , Bi 3 3− , Bi 4 2− , Bi 5 3− , Bi 7 3− , GaTe 2− , Ge 9 2− , Ge 9 4− , Ge 2 S 6 4− , HgSe 2 2− , Hg 3 Se 4 2− , In 2 Se 4 2− , In 2 Te 4 2− , Ni 5 Sb 17 4− , Pb 5 2− , Pb 7 4− , Pb 9 4− , Pb 2 Sb 2 2− , Sb 3 3− , Sb 4 2− , Sb 7 3− , SbSe 4 3− , SbSe 4 5− , SbTe 4 5− , Sb 2 Se 3 − , Sb 2 Te 5 4− , Sb 2 Te 7 4− ,Sb 4 Te 4 4− , Sb 9 Te 6 3− , Se 2 2− , Se 3 2− , Se 4 2− , Se 5,6 2− , Se 6 2− , Sn 4 2− , Sn 5 2− , Sn 9 3− , Sn 9 4− , SnS 4 4− , SnSe 4 4− , SnTe 4 4− , SnS 4 Mn 2 5− , Sn 2 S 6 4− , Sn 2 Se 6 4− , Sn 2 Te 6 4− , Sn 2 Bi 2 2− , Sn 8 Sb 3− , Te 2 2− , Te 3 2− , Te 4 2− , Tl 2 Te 2 2− , TlSn 8 3− , TlSn 8 5− , TlSn 9 3− , TlTe 2 2− , and a mixture thereof.

4. The particle of claim 1 , wherein the inorganic capping agent further comprises a metal selected from the group consisting of a transition metal, a lanthanide, an actinide, a main group metal, a metalloid, and a mixture thereof.

5. The particle of claim 1 , wherein the inorganic capping agent further comprises a soluble metal chalcogenide selected from the group consisting of molecular compounds derived from CuInSe 2 , CuIn x Ga 1-x Se 2 , Ga 2 Se 3 , In 2 Se 3 , In 2 Te 3 , Sb 2 S 3 , Sb 2 Se 3 , Sb 2 Te 3 , ZnTe, and a mixture thereof.

6. The particle of claim 1 , wherein the nanoparticle is selected from the group consisting of a nanocrystal, a nanorod, a nanowire, and a mixture thereof.

7. The particle of claim 1 , wherein the nanoparticle is selected from a group consisting of AN, AlP, AlAs, Ag, Au, Bi, Bi 2 S 3 , Bi 2 Se 3 , Bi 2 Te 3 , CdS, CdSe, CdTe, Co, CoPt, CoPt 3 , Cu, Cu 2 S, Cu 2 Se, CuInSe 2 , CuIn (1-x) Ga x (S,Se) 2 , Cu 2 ZnSn(S,Se) 4 , Fe, FeO, Fe 2 O 3 , Fe 3 O 4 , FePt, GaN, GaP, GaAs, GaSb, GaSe, Ge, HgS, HgSe, HgTe, InN, InP, InSb, InAs, Ni, PbS, PbSe, PbTe, Pd, Pt, Ru, Rh, Si, Sn, ZnS, ZnSe, ZnTe, Au/PbS, Au/PbSe, Au/PbTe, Ag/PbS, Ag/PbSe, Ag/PbTe, Pt/PbS, Pt/PbSe, Pt/PbTe, Au/CdS, Au/CdSe, Au/CdTe, Ag/CdS, Ag/CdSe, Ag/CdTe, Pt/CdS, Pt/CdSe, Pt/CdTe, Au/FeO, Au/Fe 2 O 3 , Au/Fe 3 O 4 , Pt/FeO, Pt/Fe 2 O 3 , Pt/Fe 3 O 4 , FePt/PbS, FePt/PbSe, FePt/PbTe, FePt/CdS, FePt/CdSe, FePt/CdTe, CdSe/CdS, CdSe/ZnS, InP/CdSe, InP/ZnS, InP/ZnSe, InAs/CdSe, InAs/ZnSe, and a mixture thereof.

Assignees

• Talapin Dmitri V
• Kovalenko Maksym V
• Lee Jong-Soo
• Jiang Chengyang
• Univ Chicago

Inventors

• Talapin Dmitri V
• Kovalenko Maksym V
• Lee Jong-Soo
• Jiang Chengyang

Classifications

• C01P2002/84

  by UV- or VIS- data · CPC title

• C30B7/00

  Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B9/00; by normal or gradient freezing C30B11/00; under a protective fluid C30B27/00) · CPC title

• C30B29/46

  Sulfur-, selenium- or tellurium-containing compounds · CPC title

• C09K11/565

  with zinc cadmium · CPC title

• C09K11/562 Primary

  Chalcogenides · CPC title