Lead frame based MEMS sensor structure

Patent metadata

Field	Value
Publication number	US-9346667-B2
Application number	US-201414287230-A
Country	US
Kind code	B2
Filing date	May 27, 2014
Priority date	May 27, 2014
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A sensor structure is disclosed. The sensor structure may include a lead frame for supporting a MEMS sensor, a recess in a surface of the lead frame, and a MEMS sensor coupled to the surface of the lead frame and arranged over the recess to form a chamber. Alternatively, the lead frame may have a perforation formed through it and the MEMS sensor may be coupled to the surface of the lead frame and arranged over an opening of the perforation.

First claim

What is claimed is:

1. A sensor structure, comprising:
a lead frame for supporting a MEMS sensor;
a recess in a surface of the lead frame; and
a MEMS sensor coupled to the surface of the lead frame and arranged over the recess to form a chamber.

2. The sensor structure of claim 1 ,
wherein the MEMS sensor comprises at least one diaphragm structure.

3. The sensor structure of claim 1 ,
the lead frame comprising a semiconductor chip paddle region and a plurality of electrical leads arranged around the periphery of the semiconductor chip paddle region; wherein at least one member of a group comprising the chip paddle region and the plurality of electrical leads are configured to be electrically connected to a circuit board.

4. The sensor structure of claim 3 ,
wherein the recess is formed in the chip paddle region.

5. The sensor structure of claim 1 , further comprising:
an integrated circuit electrically coupled to the MEMS sensor;
wherein the integrated circuit is configured to process a signal generated by the MEMS sensor.

6. The sensor structure of claim 5 ,
wherein the integrated circuit is electrically coupled to the MEMS sensor through a
wire bonding process.

7. The sensor structure of claim 5 ,
wherein the integrated circuit is electrically coupled to the lead frame.

8. The sensor structure of claim 5 , further comprising:
an encapsulation layer disposed over a surface of the lead frame;
wherein the encapsulation layer at least partially envelops the MEMS sensor and the
integrated circuit.

9. The sensor structure of claim 8 ,
wherein the encapsulation layer is deposited through a transfer molding process.

10. The sensor structure of claim 8 , further comprising:
an opening in the encapsulation layer;
wherein the opening is arranged such that a portion of the MEMS sensor is not covered by the encapsulation layer.

11. The sensor structure of claim 10 , further comprising:
a spacer structure arranged at an edge region of the opening;
wherein the spacer structure is configured to prevent the encapsulation layer from being deposited in the opening.

12. A sensor structure, comprising:
a lead frame for supporting a MEMS sensor;
a through hole formed in a portion of the lead frame; and
a MEMS sensor coupled to a surface of the lead frame and arranged over an opening of the through hole to form a vaulted structure.

13. The sensor structure of claim 12 , further comprising:
a structure configured to seal an opening of the through hole;
wherein the structure is arranged at an opposite end of the through hole from the MEMS sensor.

14. The sensor structure of claim 13 ,
wherein the MEMS sensor comprises at least one diaphragm structure.

15. The sensor structure of claim 13 , further comprising:
an integrated circuit electrically coupled to the MEMS sensor;
wherein the integrated circuit is configured to process a signal generated by the MEMS sensor.

16. The sensor structure of claim 13 ,
wherein the lead frame comprises a semiconductor chip paddle region and a plurality
of electrical leads configured to be connected to a circuit board and arranged around
the periphery of the semiconductor chip paddle region.

17. The sensor structure of claim 16 ,
wherein the through hole is formed in the semiconductor chip paddle region.

18. The sensor structure of claim 13 , further comprising:
an encapsulation layer disposed over a surface of the lead frame;
wherein the encapsulation layer at least partially envelops the MEMS sensor and the
integrated circuit.

19. The sensor structure of claim 18 , further comprising:
an opening in the encapsulation layer;
wherein the opening is arranged such that a portion of the MEMS sensor is not covered by the encapsulation layer.

20. The sensor structure of claim 18 , further comprising:
a spacer structure arranged at an edge region of the opening;
wherein the spacer structure is configured to prevent the encapsulation layer from being deposited in the opening.

21. The sensor structure of claim 18 ,
wherein a portion of the through hole extends laterally into the lead frame beyond the perimeter of the MEMS sensor.

Assignees

• Infineon Technologies Ag

Inventors

• Ghahremani Cyrus
• Theuss Horst
• Schindler Stefan Uwe
• Kohl Dominik

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title

• H10W72/07554

  changes in dispositions · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title