Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

Patent metadata

Field	Value
Publication number	US-9344200-B2
Application number	US-201414509601-A
Country	US
Kind code	B2
Filing date	Oct 8, 2014
Priority date	Oct 8, 2014
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

First claim

What is claimed is:

1. An electrical device comprising:
a first semiconductor device positioned on a first portion of a semiconductor on insulator (SOI) substrate;
a second semiconductor device positioned on a third portion of the SOI substrate; and
an optical interconnect positioned on a second portion of the semiconductor substrate that is positioned between the first and third portions of the semiconductor substrate, the optical interconnect is present on at least one interlevel dielectric layer that is present over at least one of the first and second semiconductor devices, the optical interconnect including a III-V light emission device, a dielectric waveguide and III-V light detection device, wherein at least one material layer of at least one of the III-V light emission device and the III-V light detection device is an epitaxial material that is in direct contact with abuse semiconductor substrate of the SOI substrate through a via extending through the least one interlevel dielectric layer and a buried dielectric layer of the SOI substrate.

2. The electronic device of claim 1 , wherein the first semiconductor device comprises a switching device selected from the group consisting of field effect transistor (FET), fin field effect transistor (FinFET), metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), Schottky barrier semiconductor device, junction field effect transistor (JFET) and combinations thereof, or the first semiconductor device comprises a memory device selected from the group consisting of flash memory, dynamic random access memory, embedded dynamic random access memory, and combinations thereof.

3. The electronic device of claim 1 , wherein the second semiconductor device comprises a switching device selected from the group consisting of field effect transistor (FET), fin field effect transistor (FinFET), metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), Schottky harrier semiconductor device, junction field effect transistor (JFET) and combinations thereof, or the second semiconductor device comprises a memory device selected from the group consisting of flash memory, dynamic random access memory, embedded dynamic random access memory and combinations thereof.

4. The electronic device of claim 1 , wherein the III-V light emission device is a quantum well laser comprising a first conductivity type III-V semiconductor material layer, a quantum well stack of III-V semiconductor material layers that is present on the first conductivity type III-V semiconductor material layer, and a second conductivity type III-V semiconductor material layer that is present on the quantum well stack of III-V semiconductor material layers.

5. The electronic device of claim 1 , wherein the III-V light detection device includes a first conductivity type III-V semiconductor material layer, an intrinsic III-V semiconductor material layer, and a second conductivity type III-V semiconductor material layer.

6. The electronic device of claim 1 , wherein the first semiconductor device is in electrical communication through at least one first interconnect to the III-V light emission device of the optical interconnect, and the second semiconductor device is in electrical communication through at least one second interconnect to the III-V light detection device of the optical interconnect.

7. The electrical device of claim 1 , wherein the dielectric waveguide has a width that tapers from a first face having a first width that is adjacent to the III-V light emission device to a second face having a second width that is adjacent to the III-V light detection device.

8. The electrical device of claim 7 , wherein the dielectric waveguide is comprised of a dielectric material selected from the group consisting of amorphous silicon, polysilicon, poly III-V semiconductor material, aluminum nitride (AlN) and a combination thereof.

9. The electrical device of claim 1 , wherein the base semiconductor substrate is composed of a type IV semiconductor material.

10. An electrical device comprising:
a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate;
an interlevel dielectric layer is present on the first, second and third portions of the substrate, wherein the interlevel dielectric layer is present over the first and second semiconductor devices; and
an optical interconnect is positioned over the second portion of the semiconductor substrate, wherein at least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

11. The electrical device of claim 10 , wherein the optical interconnect includes a III-V light emitting device, a dielectric waveguide and a III-V light detecting device.

12. The electrical device of claim 10 , wherein the first semiconductor device comprises a first switching device selected from the group consisting of field effect transistor (FET), fin field effect transistor (FinFET), metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), Schottky barrier semiconductor device, junction field effect transistor (JFET) and combinations thereof, or the first semiconductor device comprises a first memory device selected from the group consisting of flash memory, dynamic random access memory, embedded dynamic random access memory and combinations thereof.

13. The electrical device of claim 11 , wherein the second semiconductor device comprises a second switching device selected from the group consisting of field effect transistor (FET), fin field effect transistor (FinFET), metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), Schottky barrier semiconductor device, junction field effect transistor (JFET) and combinations thereof, or the second semiconductor device comprises a second memory device selected from the group consisting of flash memory, dynamic random access memory, embedded dynamic random access memory and combinations thereof.

14. The electrical device of claim 11 , wherein a third semiconductor device is present underlying the optical interconnect, the third semiconductor device being present on an upper surface of the semiconductor substrate in the second portion of the semiconductor substrate, the third semiconductor device being covered by the at least one interlevel dielectric layer.

15. The electrical device of claim 14 , wherein the third semiconductor device comprises a third switching device selected from the group consisting of field effect transistor (FET), fin field effect transistor (FinFET), metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), Schottky barrier semiconductor device, junction field effect transistor (JFET) and combinations thereof, or the third semiconductor device comprises a third memory device selected from the group consisting of flash memory, dynamic random access memory, embedded dynamic random access memory and combinations thereof.

16. The electrical device of claim 11 , wherein the optoelectronic light emission device is a quantum well laser comprising a first conductivity type III-V semiconductor material layer, a quantum well stack of III-V semiconductor material layers that is present on

Assignees

• IBM

Inventors

• Cheng Cheng-Wei
• Li Ning
• Sadana Devendra K
• Shiu Kuen-Ting

Classifications

• H10D86/215

  comprising FinFETs · CPC title

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10F77/496

  Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45) · CPC title