Gate driving with phased slew rate control and overcurrent protection
US-2024243737-A1 · Jul 18, 2024 · US
US9344068B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9344068-B2 |
| Application number | US-201313768367-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 15, 2013 |
| Priority date | Feb 15, 2012 |
| Publication date | May 17, 2016 |
| Grant date | May 17, 2016 |
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A device for the generation of short electric pulses, comprising a base generator for the generation of base monocycle pulses, wherein the base generator is followed by a transistor stage 4.
Opening claim text (preview).
We claim: 1. A device for generation of short electric pulses, comprising a base generator for the generation of base monocycle pulses, characterized in that a transistor stage follows the base generator, wherein the transistor stage follows an attenuator element and an attenuated base monocycle pulse can be tapped at the output thereof, the transistor stage is operated with a bias voltage, a direct current voltage source is included for the purpose of biasing the transistor stage, and the direct current voltage and the attenuated base monocycle pulse are matched to each other in such a manner that the transistor stage is particularly not saturated by the sum of the direct current and the attenuated base monocycle pulse. 2. The device of claim 1 , further comprising wherein the direct current voltage source is applied at a base terminal of the transistor stage. 3. The device of claim 2 , further comprising wherein the direct current voltage source can be adjusted via an adjustment device. 4. The device of claim 3 , further comprising wherein the adjustment device is designed as a digital to analog converter. 5. The device of claim 3 , further comprising wherein the adjustment device is designed as an analog to digital potentiometer. 6. The device of claim 1 , wherein the configuration further comprises a temperature compensation device. 7. The device of claim 6 , further comprising wherein the temperature compensation device adjusts the direct current voltage in such a manner that a temperature variation of the device is compensated. 8. The device of claim 7 , wherein the temperature compensation device further comprises a thermistor. 9. The device of claim 7 , further comprising wherein the compensation device acts on an analog or digital potentiometer. 10. The device of claim 1 , wherein the transistor stage is followed by a derivative element and a clipping device. 11. The device of claim 10 , further comprising wherein the clipping device is designed as a Schottky diode. 12. The device of claim 1 , wherein the attenuator element is designed as a pi element, a T element, or as a voltage divider. 13. The device of claim 1 , further comprising wherein the bias voltage can be adjusted.
by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding (H03K5/07 takes precedence; comparing one pulse with another H03K5/22; providing a determined threshold for switching H03K17/30) · CPC title
by increasing duration; by decreasing duration · CPC title
by the use, as active elements, of semiconductors, not otherwise provided for · CPC title
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