Magnetic memory device

Patent metadata

Field	Value
Publication number	US-9343660-B2
Application number	US-201414583831-A
Country	US
Kind code	B2
Filing date	Dec 29, 2014
Priority date	Apr 21, 2010
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

First claim

What is claimed is:

1. A magnetic memory device comprising:
a fixed layer comprising;
a first contact magnetic layer including Co, Fe and B and having a first saturation magnetization;
a vertical magnetic layer having perpendicular magnetization; and
an exchange coupling layer disposed between the first contact magnetic layer and the vertical magnetic layer;

a free layer having a second saturation magnetization; and
a tunnel barrier layer disposed between the free layer and the fixed layer,
wherein the first saturation magnetization is higher than the second saturation magnetization.

2. The magnetic memory device of claim 1 , wherein a thickness of the first contact magnetic layer is smaller than a thickness of the vertical magnetic layer.

3. The magnetic memory device of claim 1 , wherein the vertical magnetic layer comprises at least one of Cr, Pt, Pd, or Ir.

4. A magnetic memory device comprising:
a fixed layer comprising;
a first contact magnetic layer including Co, Fe and B;
a vertical magnetic layer having perpendicular magnetization; and
an exchange coupling layer disposed between the first contact magnetic layer and the vertical magnetic layer;

a free layer; and
a tunnel barrier layer disposed between the free layer and the fixed layer.

5. The magnetic memory device of claim 4 , wherein a thickness of the first contact magnetic layer is smaller than a thickness of the vertical magnetic layer.

6. The magnetic memory device of claim 4 , wherein the vertical magnetic layer comprises at least one of Cr, Pt, Pd, or Ir.

7. The magnetic memory device of claim 4 , wherein the exchange coupling layer comprises Ru.

8. The magnetic memory device of claim 4 , wherein the free layer including Co, Fe and B.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jangeun
• Oh Sechung
• Lee Jeahyoung
• Kim Woojin
• Jeong Junho
• Lim Woo Chang

Classifications

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/123

  having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title