Method of manufacturing light-emitting device

Patent metadata

Field	Value
Publication number	US-9343618-B2
Application number	US-201414179426-A
Country	US
Kind code	B2
Filing date	Feb 12, 2014
Priority date	Mar 28, 2013
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A method of manufacturing a light-emitting device includes providing a case including an annular sidewall and an LED chip including a chip substrate and a crystal layer and mounted in a region surrounded by the sidewall of the case, and dripping a droplet of an electrically-charged phosphor-containing resin so as to fill a space between the sidewall and the LED chip. The droplet is attracted toward the sidewall by an electrostatic force during the dripping.

First claim

What is claimed is:

1. A method of manufacturing a light-emitting device, comprising:
providing a case comprising:
an annular sidewall; and
a light-emitting diode (LED) chip, the LED chip comprising:
a chip substrate; and
a crystal layer, the LED chip being mounted in a region surrounded by the sidewall of the case;

dripping a droplet of an electrically-charged phosphor-containing resin so as to fill a space between the sidewall and the LED chip; and
forming a protective resin layer so as to fill a space between the phosphor-containing resin and an upper edge of the sidewall, the protective resin layer not including a phosphor,
wherein the droplet is attracted toward the sidewall by an electrostatic force during the dripping, and
wherein the phosphor-containing resin is not applied to an upper surface of the LED chip.

2. The method according to claim 1 , wherein the phosphor-containing resin has a relative permittivity of not less than 3.

3. The method according to claim 1 , wherein the droplet has a viscosity of not less than 5 Pas.

4. The method according to claim 1 , wherein the droplet is dripped while the crystal layer is grounded.

5. The method according to claim 1 , further comprising:
charging the electrically-charged phosphor-containing resin to have a first charge; and
charging the case to have a second charge, the first charge being opposite to the second charge.

6. A method of manufacturing a light-emitting device, comprising:
providing a case comprising:
an annular sidewall; and
a light-emitting diode (LED) chip, the LED chip comprising:
a chip substrate; and
a crystal layer, the LED chip being mounted in a region surrounded by the sidewall of the case; and

dripping a droplet of an electrically-charged phosphor-containing resin so as to fill a space between the sidewall and the LED chip,
wherein the droplet is attracted toward the sidewall by an electrostatic force during the dripping,
wherein the electrically-charged phosphor-containing resin formed only on a side of the LED chip,
wherein at an interface between the region and the side of the LED chip, a height of the resin is substantially equal to a height of the LED chip, and
wherein at an interface between the sidewall and the resin, a height of the resin is greater than a height of the resin at the interface between the resin and the LED chip.

7. The method according to claim 5 , wherein the phosphor-containing resin has a relative permittivity of not less than 3.

8. The method according to claim 5 , wherein the droplet has a viscosity of not less than 5 Pas.

9. The method according to claim 5 , wherein the droplet is dripped while the crystal layer is grounded.

10. The method according to claim 5 , wherein the electrically-charged phosphor-containing resin has a first charge and the case has a second charge, the first charge being opposite to the second charge.

11. A method of manufacturing a light-emitting device, comprising:
providing a case comprising:
an annular sidewall; and
a light-emitting diode (LED) chip, the LED chip comprising:
a chip substrate; and
a crystal layer, the LED chip being mounted in a region surrounded by the sidewall of the case;

dripping a droplet of an electrically-charged phosphor-containing resin so as to only fill a space between an upper edge of the sidewall and the LED chip; and
forming a protective resin layer so as to fill a space between the phosphor-containing resin and an upper edge of the sidewall, the protective resin layer not including a phosphor,
wherein the droplet is attracted toward the sidewall by an electrostatic force during the dripping.

12. The method according to claim 11 , wherein the phosphor-containing resin has a relative permittivity of not less than 3.

13. The method according to claim 11 , wherein the droplet has a viscosity of not less than 5 Pas.

14. The method according to claim 11 , wherein the droplet is dripped while the crystal layer is grounded.

15. The method according to claim 11 , wherein the electrically-charged phosphor-containing resin has a first charge and the case has a second charge, the first charge being opposite to the second charge.

Assignees

• Toyoda Gosei Kk

Inventors

• Nonogawa Takashi
• Terayama Takashi
• Hayashi Toshimasa

Classifications

• H10H20/8516

  having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/01 Primary

  Manufacture or treatment · CPC title

• H01L33/508

  Electricity · mapped topic

• H01L2933/0041

  Electricity · mapped topic