Selector device using low leakage dielectric MIMCAP diode

Patent metadata

Field	Value
Publication number	US-9343523-B2
Application number	US-201514599878-A
Country	US
Kind code	B2
Filing date	Jan 19, 2015
Priority date	Dec 4, 2012
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

MIMCAP diodes are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP diodes can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a barrier height modification layer, a low leakage dielectric layer and a high leakage dielectric layer. The layers can be sandwiched between two electrodes.

First claim

What is claimed is:

1. A method to form a device, the method comprising
forming a first layer,
wherein the first layer is operable as an electrode;

forming a second layer disposed above the first layer,
wherein the second layer comprises HfO x ;

forming a third layer disposed above the first layer,
wherein the third layer comprises doped HfO x ,
wherein the second layer has a different band gap than the third layer;

forming a fourth layer disposed above the first layer,
wherein the fourth layer comprises HfO x ,
wherein a leakage current of the fourth layer is higher than a leakage current of the third layer; and

forming a fifth layer disposed above the first layer,
wherein the fifth layer is operable as an electrode;
wherein the second layer, the third layer, and the fourth layer are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity;
wherein the second polarity is opposite of the first polarity.

2. The method of claim 1 , wherein the third layer is disposed between the second layer the fourth layer, and wherein the second layer, the third layer, and the fourth layers are disposed between the first and fifth layer.

3. The method of claim 1 , wherein the fourth layer is disposed between the second layer the third layer, and wherein the second layer, the third layer, and the fourth layers are disposed between the first and fifth layer.

4. The method of claim 1 , wherein the second layer is disposed between the third layer the fourth layer, and wherein the second layer, the third layer, and the fourth layers are disposed between the first and fifth layer.

5. The method as in claim 1 , further comprising performing a treatment after forming the second layer, the third layer, the fourth layer, or the fifth layer.

6. The method as in claim 5 , wherein the treatment comprises a rapid thermal oxidation process.

7. The method as in claim 5 , wherein the treatment comprises a plasma annealing process in an oxygen ambient.

8. The method of claim 1 , wherein the first layer or the fifth layer comprises at least one of TiN, Ti, Al, MoO 2 , W, poly-Si, TiSiN, TaSiN, Pr, Ta, or Ni.

9. The method of claim 1 , wherein the second layer is operable as a barrier height modification layer.

10. The method of claim 1 , wherein the second layer has a thickness of between 1 nanometer and 3 nanometers.

11. The method of claim 1 , wherein the third layer has a thickness of between 3 nanometers and 10 nanometers.

12. The method of claim 1 , wherein the fourth layer has a thickness of between 3 nanometers and 10 nanometers.

13. The method of claim 1 , wherein the first layer comprises a polysilicon.

14. The method of claim 1 , further comprising, prior to forming the third layer, in-situ treating the second layer using a rapid thermal oxidation in oxygen ambient.

15. The method of claim 1 , further comprising, prior to forming the fourth layer, in-situ treating the third layer using a rapid thermal oxidation in oxygen ambient.

16. The method of claim 1 , wherein the third layer is formed using atomic layer deposition by supplying ozone and one of tetrakis (ethylmethylamino) zirconium (TEMAZ), Tris (dimethylamino)cyclopentadienyl Zirconium (ZyALD), tetrakis (ethylmethylamino) hafnium (TEMAHf), or tetrakis (dimethylamido) hafnium (TDMAHf) into a deposition chamber.

17. The method of claim 16 , wherein the third layer is formed at a temperature of 250° C. and 300° C.

Assignees

• Intermolecular Inc

Inventors

• Phatak Prashant B

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title