Electrically-driven phase transitions in functional oxide heterostructures

Patent metadata

Field	Value
Publication number	US-9343206-B2
Application number	US-201314373908-A
Country	US
Kind code	B2
Filing date	Feb 6, 2013
Priority date	Feb 6, 2012
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A tunable resistance system includes a layer of a first functional material deposited on a component of the system. The first functional material undergoes a phase transition at a first critical voltage. An insulating layer is deposited upon the layer of first functional material. A layer of a second functional material deposited on the insulating layer. The second functional material undergoes a phase transition at a second critical voltage. The insulating layer is configured to induce a stress on the layer so as to change the first critical voltage. In this way, the resistance of the system is tunable, allowing the system to undergo multi-stage electrical switching of resistive states.

First claim

What is claimed is:

1. A system comprising:
a layer of a first functional material deposited on a component of the system, wherein the first functional material undergoes a phase transition at a first critical voltage;
an insulating layer deposited upon the layer of first functional material; and
a layer of a second functional material deposited on the insulating layer, wherein the second functional material undergoes a phase transition at a second critical voltage;
wherein the insulating layer is configured to induce a stress on the layer of the first functional material so as to change the first critical voltage, so that the resistance of the system is tunable so as to allow the system to undergo multi-stage electrical switching of resistive states.

2. The system of claim 1 , wherein the component comprises one of: an electrode, and an interfacial layer.

3. The system of claim 1 , wherein the first functional material and the second functional material are identical.

4. The system of claim 1 , wherein the first functional material is different from the second functional material.

5. The system of claim 1 , wherein the first critical voltage and the second critical voltage are the same.

6. The system of claim 1 , wherein the first and second functional materials comprise at least one of: an oxide; a nitride; a rare earth nickelide; and a chalcogenide.

7. The system of claim 6 , wherein the oxide comprises one of: a functional oxide;
a metal oxide; and a semiconductor oxide.

8. The system of claim 7 , wherein the metal oxide comprises one of a chromium oxide and a hafnium oxide; and wherein the semiconductor oxide comprises a silicon oxide.

9. The system of claim 6 , wherein the rare earth nickelide comprises a samarium nickelide (S m N i O 3 ).

10. The system of claim 1 , wherein the first functional material and the second functional material is VO 2 , and the insulating layer is H f O 2 .

11. A tunable multi-resistance device, comprising:
a plurality N of structures stacked adjacent to one other, each structure comprising:
a functional layer deposited on a component of the device, the functional layer comprising a functional material that is adapted to undergo a phase transition at a threshold voltage; and
an insulating layer deposited on the functional layer;
wherein in each structure, the insulating layer is configured to induce a stress on the functional layer so as to change the threshold voltage at which the functional layer undergoes the phase transition, so that the device can undergo multi-stage electrical switching of resistive states.

12. The tunable multi-resistance device of claim 11 , wherein the functional material comprises at least one of: an oxide; a nitride;
a rare earth nickelide; and a chalcogenide.

13. The tunable multi-resistance device of claim 11 , wherein the component comprises one of: an electrode, and an interfacial layer.

14. A method comprising:
depositing a layer of a first functional material on a component of a system, the first functional material adapted to undergo a phase transition at a first critical voltage;
depositing an insulating layer upon the layer of the first functional material;
depositing a layer of a second functional material on the insulating layer, the second functional material adapted to undergo a phase transition at a second critical voltage; and
the insulating layer inducing a stress on the layer of the first functional material, so as to change the first critical voltage and thereby induce in the system multi-resistive states in which electrically driven phase transitions occur at multiple critical voltages.

15. The method of claim 14 , wherein the component is a substrate.

Assignees

• Zhou You
• Yang Zheng
• Ramanathan Shriram
• Harvard College

Inventors

• Zhou You
• Yang Zheng
• Ramanathan Shriram

Classifications

• G11C11/5678 Primary

  using amorphous/crystalline phase transition storage elements · CPC title

• H01L45/147

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01C17/06

  adapted for coating resistive material on a base · CPC title

• H01C7/18

  comprising a plurality of layers stacked between terminals · CPC title