Reflective photomask blank, reflective photomask, and integrated circuit device manufactured by using reflective photomask

Patent metadata

Field	Value
Publication number	US-9341941-B2
Application number	US-201414336643-A
Country	US
Kind code	B2
Filing date	Jul 21, 2014
Priority date	Aug 1, 2013
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A reflective photomask blank, a reflective photomask and an integrated circuit device manufactured by using a reflective photomask, include a multi-layered reflection layer; a capping layer on the multi-layered reflection layer and including a first transition metal; a passivation film contacting at least a portion of the capping layer on a side opposite to the multi-layered reflection layer and including a second transition metal and a nitrogen (N) atom; and a light absorption pattern covering a portion of the capping layer.

First claim

What is claimed is:

1. A reflective photomask blank, comprising:
a multi-layered reflection layer on a photomask substrate;
a capping layer on the multi-layered reflection layer, the capping layer including a first transition metal;
a passivation film contacting at least a portion of the capping layer on a side opposite to the multi-layered reflection layer, the passivation film including a second transition metal and a nitrogen (N) atom;
a light absorption layer above the capping layer relative to the photomask substrate; and
a buffer layer between the capping layer and the light absorption layer, the buffer layer including a different element than the capping layer and the passivation film.

2. The reflective photomask blank of claim 1 , wherein the capping layer includes ruthenium (Ru).

3. The reflective photomask blank of claim 1 , wherein at least a portion of the passivation film is formed of a metal nitride including ruthenium (Ru) and the nitrogen (N) atom.

4. The reflective photomask blank of claim 1 , wherein at least a portion of the passivation film is formed of a metal oxynitride including ruthenium (Ru), oxygen (O), and the nitrogen (N) atom.

5. The reflective photomask blank of claim 1 , wherein the passivation film has a N concentration distribution in which the content of nitrogen is smaller towards the capping layer from a surface of the passivation film opposite to the capping layer along a thickness direction of the passivation film.

6. The reflective photomask blank of claim 1 , wherein the passivation film is between the capping layer and the light absorption layer.

7. A reflective photomask, comprising:
a multi-layered reflection layer on a photomask substrate;
a capping layer on the multi-layered reflection layer, the capping layer including a first transition metal;
a passivation film contacting at least a portion of the capping layer on a side opposite to the multi-layered reflection layer, the passivation film including a second transition metal and a nitrogen (N) atom;
a light absorption pattern above the capping layer relative to the photomask substrate; and
a buffer pattern between the capping layer and the light absorption pattern, the buffer pattern including a different element than the capping layer and the passivation film.

8. The reflective photomask of claim 7 , wherein the passivation film includes a portion between the capping layer and the light absorption pattern.

9. The reflective photomask of claim 7 , wherein
the passivation film includes an exposed first portion and a second portion between the capping layer and the light absorption pattern, and
the exposed first portion and the second portion each independently contact the capping layer.

10. The reflective photomask of claim 7 , wherein
the passivation film includes a first portion contacting the capping layer and a second portion covering the light absorption pattern, and
the second portion is spaced apart from the capping layer.

11. The reflective photomask of claim 10 , wherein the first portion and the second portion of the passivation film are each independently exposed.

12. The reflective photomask of claim 10 , wherein the first portion and the second portion are formed of different elements.

13. The reflective photomask of claim 10 , wherein the first portion and the second portion are formed of the same elements.

14. An integrated circuit (IC) device manufactured by using the reflective photomask according to claim 7 .

15. A reflective photomask, comprising:
at least one reflection layer on a photomask substrate;
a layer resistant to oxidation, the layer resistant to oxidation at least partially covering the at least one reflection layer, and the layer resistant to oxidation including a first transition metal;
a light absorption layer on at least a portion the layer resistant to oxidation;
a passivation film above the layer resistant to oxidation relative to the photomask substrate, the passivation film including a second transition metal and a nitrogen (N) atom; and
a buffer layer between the layer resistant to oxidation and the light absorption layer, the buffer layer including a different element than the layer resistant to oxidation and the passivation film.

16. The reflective photomask of claim 15 , wherein the passivation film contacts at least a portion of the layer resistant to oxidation.

17. The reflective photomask of claim 16 , wherein an upper surface of the passivation film is at least partially exposed.

18. The reflective photomask of claim 17 , wherein the first and second transition metals are ruthenium, and a concentration of the ruthenium in the passivation film either decreases or remains the same from the upper surface of the passivation film toward a lower surface of the passivation film.

19. The reflective photomask of claim 16 , wherein at least one of the first transition metal and the second transition metal is ruthenium.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Han-Shin
• Choi Jae-Hyuck
• Koh Soo-Wan
• Kim Jin-Su
• Ko Hyung-Ho

Classifications

• G03F1/24

  Reflection masks; Preparation thereof · CPC title

• Y10T428/24802

  Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] · CPC title

• G03F1/52 Primary

  Reflectors · CPC title