Semiconductor fabrication process

Patent metadata

Field	Value
Publication number	US-9340880-B2
Application number	US-201414464748-A
Country	US
Kind code	B2
Filing date	Aug 21, 2014
Priority date	Oct 27, 2009
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.

First claim

What is claimed is:

1. A semiconductor fabrication process, comprising:
providing a coated article, the coated article having a substrate and a layer applied to the substrate by decomposition and then oxidization of dimethylsilane through chemical vapor deposition, the layer applied by a fluid material; and then
positioning the coated article in a system for producing a semiconductor product.

2. The process of claim 1 , wherein the layer is applied to an oxidized layer, a pretreated layer, or a combination thereof.

3. The process of claim 2 , wherein the oxidized layer includes an oxidized carbosilane material.

4. The process of claim 2 , wherein the oxidized layer is formed by water, zero air, or a combination thereof.

5. The process of claim 2 , wherein the oxidized layer includes oxidized dimethylsilane.

6. The process of claim 5 , wherein the layer includes trimethylsilane applied to the oxidized dimethylsilane.

7. The process of claim 1 , wherein the fluid material is a gas.

8. The process of claim 1 , wherein the fluid material is a plasma.

9. The process of claim 1 , wherein the coated article is a tube and the layer is an internal surface of the tube.

10. The process of claim 1 , wherein the coated article is a fitting and the layer is an internal surface of the fitting.

11. The process of claim 1 , wherein the coated article is a pipe and the layer is an internal surface of the pipe.

12. The process of claim 1 , wherein the coated article is a chamber and the layer is an internal surface of the chamber wall.

13. The process of claim 1 , wherein the semiconductor product comprises a crystalline solid, a poly-crystalline material, or an amorphous material.

14. The process of claim 1 , wherein the semiconductor product includes an intrinsic semiconductor.

15. The process of claim 1 , wherein the semiconductor product includes an extrinsic semiconductor having a positive charge conductor.

16. The process of claim 1 , wherein the semiconductor product is selected from the group consisting of a pure element semiconductor and a compound semiconductor.

17. The process of claim 1 , wherein the semiconductor product includes a surface consisting of indium antimonide (InSb), indium arsenide (InAs), indium phosphide (InP), gallium phosphide (GaP), gallium antimonide (GaSb), gallium arsenide (GaAs), silicon carbide (SiC), gallium nitride (GaN), silicon germanium (SiGe), or selenium sulfide (SeS).

18. A semiconductor fabrication process, comprising:
providing a coated article, the coated article having a substrate and a layer applied to the substrate by decomposition and then oxidization of dimethylsilane through chemical vapor deposition, the layer applied by a fluid material; and then
positioning the coated article in a system; and then
producing a semiconductor product from the system.

19. A semiconductor fabrication process, comprising:
providing a layer applied by decomposition and then oxidization of dimethylsilane through chemical vapor deposition, the layer applied by a fluid material; and then
positioning the layer in a system; and then
producing a semiconductor product from the system.

Assignees

• Silcotek Corp

Inventors

• Mattzela James B

Classifications

• C23C16/22

  characterised by the deposition of inorganic material, other than metallic material · CPC title

• C23C16/56 Primary

  After-treatment · CPC title

• C09D7/00

  Features of coating compositions, not provided for in group C09D5/00 (driers C09F9/00); Processes for incorporating ingredients in coating compositions · CPC title

• B05D1/60

  Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00) · CPC title