Ion implantation system and method
US-2015357152-A1 · Dec 10, 2015 · US
US9340869B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9340869-B2 |
| Application number | US-200913055274-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 18, 2009 |
| Priority date | Aug 19, 2008 |
| Publication date | May 17, 2016 |
| Grant date | May 17, 2016 |
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A formed article includes a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the formed article, and an electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability and excellent transparency.
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The invention claimed is: 1. A formed article comprising a substrate, a polyorganosiloxane compound-containing layer, and a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, wherein the gas barrier layer is formed in a surface area of the polyorganosiloxane compound-containing layer, the gas barrier layer having an oxygen atom content that decreases from a surface of the gas barrier layer in the depth direction, and having a carbon atom content that increases from the surface of the gas barrier layer in the depth direction, the surface layer part of the gas barrier layer has an oxygen atom content of 10 to 70%, a carbon atom content of 10 to 70%, and a silicon atom content of 5 to 35%, based on the total content of oxygen atoms, carbon atoms, and silicon atoms, and a depth of the gas barrier layer is 5 to 50 nm, wherein the polyorganosiloxane compound-containing layer has a thickness of 30 nm to 200 μm, wherein the formed article has a layer structure of the substrate/the polyorganosiloxane compound-containing layer/the gas barrier layer, wherein the surface layer part of the gas barrier layer has a peak position of binding energy of 2p electron of the silicon atom determined by X-ray photoelectron spectroscopy (XPS) of 102 to 104 eV, wherein the gas barrier layer is obtained by implanting ions into a polyorganosiloxane compound-containing layer, and wherein the polyorganosiloxane compound is a polyorganosiloxane shown by the following formula (b), wherein Ry represents a hydrogen atom or a non-hydrolyzable group such as a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a substituted or unsubstituted aryl group, and a plurality of Ry in the formula (b) may respectively be either the same or different. 2. The formed article according to claim 1 , wherein the ions have been implanted into a surface layer part of the polyorganosiloxane compound-containing layer. 3. The formed article according to claim 1 , wherein the ions have been obtained by ionizing at least one gas selected from the group consisting of hydrogen, nitrogen, oxygen, rare gas, and fluorocarbons. 4. The formed article according to claim 1 , wherein the ions have been implanted by plasma ion implantation. 5. An electronic device member comprising the formed article according to claim 1 . 6. An electronic device comprising the electronic device member according to claim 5 . 7. The formed article according to claim 1 , wherein the surface layer part of the gas barrier layer has an oxygen atom content of 44 to 70%, a carbon atom content of 10 to 70%, and a silicon atom content of 5 to 35%, based on the total content of oxygen atoms, carbon atoms, and silicon atoms.
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