Oxide sintered body and tablets obtained by processing same

Patent metadata

Field	Value
Publication number	US-9340867-B2
Application number	US-201213979682-A
Country	US
Kind code	B2
Filing date	Jan 19, 2012
Priority date	Feb 4, 2011
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W/(In+W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g/cm 3 .

First claim

The invention claimed is:

1. An oxide sintered body comprising an indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15 as an atomic ratio of W/(In+W),
characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten is present as a solid solution, and has a density of 3.4 to 5.5 g/cm 3 .

2. The oxide sintered body according to claim 1 , characterized by further comprising, as the additive element, one or more kinds of a metal element (M) selected from the group consisting of titanium, zirconium, hafnium, and molybdenum, wherein a total content of tungsten and the metal element is 0.001 to 0.15, as an atomic ratio of (W+M)/(In+W+M).

3. The oxide sintered body according to claim 1 , characterized in that the content of tungsten is 0.003 to 0.05, as an atomic ratio of W/(In+W).

4. The oxide sintered body according to claim 2 , characterized in that the total content of tungsten and the metal element is 0.003 to 0.05, as an atomic ratio of (W+M)/(In+W+M).

5. The oxide sintered body according to claim 1 , characterized by further comprising a crystal grain (C) composed of an indium tungstate compound phase.

6. The oxide sintered body according to claim 1 , characterized by not comprising a crystal grain (D) composed of a tungsten oxide phase.

7. A tablet obtained by processing the oxide sintered body according to claim 6 .

8. A tablet obtained by processing the oxide sintered body according to claim 1 .

Assignees

• Nakayama Tokuyuki
• Sumitomo Metal Mining Co

Inventors

• Nakayama Tokuyuki

Classifications

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F77/12

  Active materials · CPC title

• C04B2235/6562

  Heating rate · CPC title

• C04B2235/5436

  micrometer sized, i.e. from 1 to 100 micron · CPC title

• C04B2235/3286

  Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate · CPC title