Mixed abrasive polishing compositions

Patent metadata

Field	Value
Publication number	US-9340706-B2
Application number	US-201314051121-A
Country	US
Kind code	B2
Filing date	Oct 10, 2013
Priority date	Oct 10, 2013
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) first abrasive particles, wherein the first abrasive particles are ceria particles, and wherein the first abrasive particles have an average particle size of about 50 nm to about 70 nm and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %,
(b) second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, and wherein the second abrasive particles have an average particle size of about 1 nm to about 40 nm and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %,
(c) a functionalized pyridine, benzoic acid, amino acid, or combination thereof,
(d) a pH-adjusting agent, and
(e) an aqueous carrier,
wherein the polishing composition exhibits a multimodal particle size distribution, and
wherein the pH of the polishing composition is about 3.5 to about 9.

2. The chemical-mechanical polishing composition of claim 1 , wherein the second abrasive particles are ceria particles, and wherein the second abrasive particles have an average particle size of about 20 nm to about 40 nm.

3. The chemical-mechanical polishing composition of claim 2 , wherein the ratio of the concentration of the first abrasive particles present in the polishing composition to the concentration of the second abrasive particles present in the polishing composition is about 1:1 to about 5:1.

4. The chemical-mechanical polishing composition of claim 1 , wherein the second abrasive particles are ceria particles, and wherein the second abrasive particles have an average particle size of about 1 nm to about 15 nm.

5. The chemical-mechanical polishing composition of claim 4 , wherein the ratio of the concentration of the first abrasive particles present in the polishing composition to the concentration of the second abrasive particles present in the polishing composition is about 3:1 to about 6:1.

6. The chemical-mechanical polishing composition of claim 1 , wherein the second abrasive particles are surface-modified silica particles, and wherein the second abrasive particles have an average particle size of about 1 nm to about 40 nm and wherein the second abrasive particles are cationic silica particles.

7. The chemical-mechanical polishing composition of claim 6 , wherein the ratio of the concentration of the first abrasive particles present in the polishing composition to the concentration of the second abrasive particles present in the polishing composition is about 1:1 to about 15:1.

8. The chemical-mechanical polishing composition of claim 1 , wherein the second abrasive particles are organic particles selected from gelatin, latex, cellulose, polystyrene, and polyacrylate, and wherein the second abrasive particles have an average particle size of about 1 nm to about 40 nm.

9. The chemical-mechanical polishing composition of claim 8 , wherein the second abrasive particles are gelatin particles.

10. The chemical-mechanical polishing composition of claim 8 , wherein the ratio of the concentration of the first abrasive particles present in the polishing composition to the concentration of the second abrasive particles present in the polishing composition is about 1:1 to about 30:1.

11. The chemical-mechanical polishing composition of claim 1 , wherein the functionalized pyridine, benzoic acid, or amino acid is picolinic acid.

12. The chemical-mechanical polishing composition of claim 1 , wherein the pH-adjusting agent is an alkyl amine, an alcohol amine, quaternary amine hydroxide, ammonia, or a combination thereof.

13. The chemical-mechanical polishing composition of claim 12 , wherein the pH-adjusting agent is triethanolamine.

14. The chemical-mechanical polishing composition of claim 1 , wherein the pH of the polishing composition is about 3.5 to about 5.

15. A chemical-mechanical polishing composition comprising:
(a) first abrasive particles, wherein the first abrasive particles are ceria particles, and wherein the first abrasive particles have an average particle size of about 50 nm to about 70 nm and are present in the polishing composition at a concentration of about 0.005 wt.% to about 2 wt. %,
(b) second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, and wherein the second abrasive particles have an average particle size of about 1 nm to about 40 nm and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %,
(c) a polymer additive selected from polyethylene glycol (PEG), polyvinyl alcohol, poly(hydroxyethyl methacrylate), a copolymer of poly(hydroxyethyl methacrylate), cellulose, a cationic dendrimer, a monomer or homopolymer of methacryloyloxyethyl trimethylammonium, or a combination thereof,
(d) a pH-adjusting agent, and
(e) an aqueous carrier,
wherein the polishing composition exhibits a multimodal particle size distribution, and
wherein the pH of the polishing composition is about 6 to about 9.

16. A method of polishing a substrate comprising:
(i) providing a substrate;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 1 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

Assignees

• Cabot Microelectronics Corp

Inventors

• Reiss Brian
• Nalaskowski Jakub
• Lam Viet
• Jia Renhe
• Dysard Jeffrey

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P90/123

  by grinding or lapping · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H01L21/30625

  Electricity · mapped topic

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title