Magnetic memory cell and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9337419-B2
Application number	US-201514724530-A
Country	US
Kind code	B2
Filing date	May 28, 2015
Priority date	Mar 8, 2012
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A method of manufacturing a magnetic memory cell, includes forming a tunnel barrier layer over a first magnetic layer, forming a second magnetic layer over the tunnel barrier layer, forming a mask over the second magnetic layer, etching an unmasked part of the second magnetic layer to an intermediate position of the second magnetic layer in a thickness direction of the second magnetic layer, and forming a metallic oxide layer by oxidizing an unetched part of the unmasked part of the second magnetic layer.

First claim

What is claimed is:

1. A method of manufacturing a magnetic memory cell, the method comprising:
forming a first magnetic layer comprising a reversible magnetization area;
forming a tunnel barrier layer over the reversible magnetization area of the first magnetic layer;
forming a second magnetic layer over the tunnel barrier layer and over the reversible magnetization area of the first magnetic layer, the second magnetic layer comprising a fixed magnetization;
forming a mask over the second magnetic layer;
etching an unmasked part of the second magnetic layer to an intermediate position of the second magnetic layer in a thickness direction of the second magnetic layer; and
forming a metallic oxide layer by oxidizing an unetched part of the unmasked part of the second magnetic layer.

2. The method of manufacturing a magnetic memory cell according to claim 1 , wherein etching gas containing a component oxidizing a material of the second magnetic layer is used in the etching of the unmasked part of the second magnetic layer, and
wherein the unetched part is oxidized in the etching of the unmasked part of the second magnetic layer.

3. The method of manufacturing a magnetic memory cell according to claim 1 , wherein the tunnel barrier layer comprises a MgO layer,
wherein the second magnetic layer includes:
a CoFeB layer formed over the tunnel barrier layer;
an intermediate layer formed over the CoFeB layer; and
a perpendicularly magnetized layer that is formed over the intermediate layer and exhibits perpendicular magnetic anisotropy,

wherein the CoFeB layer and the intermediate layer remain and the perpendicularly magnetized layer is removed in the etching of the unmasked part of the second magnetic layer, and
wherein the metallic oxide layer is formed by oxidizing the CoFeB layer and the intermediate layer in the unmasked part.

4. The method of manufacturing a magnetic memory cell according to claim 1 ,
wherein the tunnel barrier layer comprises a MgO layer,
wherein the second magnetic layer includes:
a CoFeB layer formed over the tunnel barrier layer;
an intermediate layer formed over the CoFeB layer;
a first perpendicularly magnetized layer that is formed over the intermediate layer and exhibits perpendicular magnetic anisotropy;
a non-magnetic layer formed over the first perpendicularly magnetized layer; and
a second perpendicularly magnetized layer formed over the non-magnetic layer,

wherein the non-magnetic layer and the second perpendicularly magnetized layer are removed and the CoFeB layer, the intermediate layer, and the first perpendicularly magnetized layer partially remain in the etching of the unmasked part of the second magnetic layer, and
wherein the metallic oxide layer is formed by partially oxidizing the CoFeB layer, the intermediate layer, and the first perpendicularly magnetized layer in the unmasked part.

5. The method of manufacturing a magnetic memory cell according to claim 1 , wherein the metallic oxide layer has a thickness greater than 1.0 nm.

6. The method of manufacturing a magnetic memory cell according to claim 3 , wherein the intermediate layer comprises a Ta film.

7. A method of manufacturing a magnetic memory cell, the method comprising:
forming a fixed magnetization layer;
forming a first magnetic layer including:
a reversible magnetization area; and
a fixed magnetization area formed on a surface of the fixed magnetization layer, the fixed magnetization area having a magnetization which is fixed in the same direction as the fixed magnetization layer;

forming a tunnel barrier layer over the first magnetic layer;
forming a second magnetic layer over the reversible magnetization area of the first magnetic layer and over the tunnel barrier layer so as to partially cover the tunnel barrier layer, the second magnetic layer comprising a fixed magnetization and including a magnetic layer and a first non-magnetic layer; and
forming a metallic oxide layer on an upper surface of the tunnel barrier layer such that the tunnel barrier layer is formed between the metallic oxide layer and the fixed magnetization layer, the metallic oxide layer including an oxidized part of the magnetic layer and the first non-magnetic layer.

8. The method of manufacturing a magnetic memory cell according to claim 7 , wherein the first magnetic layer comprises a data storage layer which stores data as a direction of magnetization.

9. The method of manufacturing a magnetic memory cell according to claim 7 , wherein the reversible magnetization area of the first magnetic layer is formed outside the surface of the fixed magnetization layer.

10. The method of manufacturing a magnetic memory cell according to claim 9 , wherein the second magnetic layer is formed over the reversible magnetization area of the first magnetic layer.

11. The method of manufacturing a magnetic memory cell according to claim 7 , wherein the second magnetic layer further comprises:
a first perpendicularly magnetized layer formed on the first non-magnetic layer and exhibiting perpendicular magnetic anisotropy;
a second non-magnetic layer formed on the first perpendicularly magnetized layer; and
a second perpendicularly magnetized layer formed on the second non-magnetic layer.

12. The method of manufacturing a magnetic memory cell according to claim 1 , wherein the first magnetic layer further comprises a fixed magnetization area,
wherein the forming of the second magnetic layer comprises forming the second magnetic layer over the fixed magnetization area of the first magnetic layer, and
wherein the etching of the unmasked part of the second magnetic layer comprises etching the second magnetic layer over the fixed magnetization area.

13. The method of manufacturing a magnetic memory cell according to claim 1 , wherein the unetched part of the unmasked part of the second magnetic layer includes a metal film, and the forming of the metallic oxide layer comprises oxidizing the metal film.

14. The method of manufacturing a magnetic memory cell according to claim 1 , wherein the second magnetic layer comprises:
a first ferromagnetic layer contacting an upper surface of the tunnel barrier layer;
a non-magnetic layer formed on the first ferromagnetic layer; and
a second ferromagnetic layer formed on the non-magnetic layer.

15. The method of manufacturing a magnetic memory cell according to claim 14 , wherein the etching of the unmasked part of the second magnetic layer comprises removing the second ferromagnetic layer and the non-magnetic layer in the unmasked part of the second magnetic layer, and exposing a surface of the first ferromagnetic layer.

16. The method of manufacturing a magnetic memory cell according to claim 14 , wherein the unetched part of the unmasked part of the second magnetic layer comprises a part of the first ferromagnetic layer.

17. The method of manufacturing a magnetic memory cell according to claim 14 , wherein the first ferromagnetic layer comprises a CoFeB film contacting the upper surface of the tunnel barrier layer, and a metal film formed on the CoFeB film.

18. The method of manufacturing a magnetic memory cell according to claim 1 , wherein the forming of the metallic oxide layer comprises forming a CoFeB oxide film on the upper surface of the tunnel barrier layer.

19. The method of manufacturing a magnetic memory cell according to claim 18 , wherein the forming of the metallic oxide layer further comprises forming an oxide of the metal film on the CoFeB oxide film.

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Assignees

• Renesas Electronics Corp

Inventors

• Kariyada Eiji
• Suemitsu Katsumi

Classifications

• H01L27/222

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/14

  Electricity · mapped topic

• H01L43/12 Primary

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic