Radiation-emitting semiconductor device

Patent metadata

Field	Value
Publication number	US-9337397-B2
Application number	US-201113636048-A
Country	US
Kind code	B2
Filing date	Mar 2, 2011
Priority date	Mar 24, 2010
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A radiation-emitting semiconductor device includes a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip, and the radiation-emitting semiconductor chip is free of the light-absorbing material in locations.

First claim

The invention claimed is:

1. A radiation-emitting semiconductor device comprising:
a housing body having a chip mounting area;
a chip connection region;
a radiation-emitting semiconductor chip;
a wire connection region;
a wire electrically conductively connecting the wire connection region to the radiation-emitting semiconductor chip; and
a light-absorbing material,
wherein
the chip connection region and the wire connection region are arranged at the chip mounting area,
the radiation-emitting semiconductor chip is fixed to the chip connection region,
the chip connection region is covered with the light-absorbing material at selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,
the wire connection region is covered with the light-absorbing material at selected locations at which it is not covered by the wire,
the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations,
the chip mounting area is free of the light-absorbing material in selected locations, and
the housing body and the light-absorbing material are the same color.

2. The radiation-emitting semiconductor device according to claim 1 , wherein the chip mounting area is formed with the same color as, or in a similar color to, the light absorbing material.

3. The radiation-emitting semiconductor device according to claim 1 , further comprising a light-transmissive potting material, wherein
the potting material is substantially free of the light-absorbing material, and
the potting material adjoins the radiation-emitting semiconductor chip and the light-absorbing material in selected locations.

4. The radiation-emitting semiconductor device according to claim 3 , wherein the potting material adjoins the chip mounting area in selected locations.

5. The radiation-emitting semiconductor device according to claim 3 , wherein the potting material is transparent.

6. The radiation-emitting semiconductor device according to claim 3 , wherein the potting material is filled with a phosphor and/or a diffuser.

7. The radiation-emitting semiconductor device according to claim 3 , wherein the chip connection region and/or the wire connection region are formed with a metal.

8. The radiation-emitting semiconductor device according to claim 7 , wherein the light-absorbing material inhibits migration and/or oxidation and/or corrosion of the metal.

9. The radiation-emitting semiconductor device according to claim 1 , wherein the light-absorbing material is applied by a jet process.

10. The radiation-emitting semiconductor device according to claim 1 , wherein the light-absorbing material comprises a silicone into which light-absorbing particles are introduced.

11. Display apparatus, wherein at least one pixel of the display apparatus is formed at least partly by a radiation-emitting semiconductor device according to claim 1 .

12. A radiation-emitting semiconductor device comprising:
a chip connection region;
a radiation-emitting semiconductor chip;
a housing body having a chip mounting area; and
a light-absorbing material,
wherein
the radiation-emitting semiconductor chip is fixed to the chip connection region,
the chip connection region is covered with the light-absorbing material at locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,
the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations,
the chip connection region and/or a wire connection region are arranged at the chip mounting area,
the chip mounting area is free of the light-absorbing material in selected locations, and
the chip mounting area is formed with the same color as, or in a similar color to, the light absorbing material.

Assignees

• Wittmann Michael
• Osram Opto Semiconductors Gmbh

Inventors

• Wittmann Michael

Classifications

• H10W72/5366

  the bond wires having kinks · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/854 Primary

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/853

  characterised by their shape · CPC title