Photoelectric conversion device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9337361-B2
Application number	US-201113299768-A
Country	US
Kind code	B2
Filing date	Nov 18, 2011
Priority date	Nov 26, 2010
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a high aspect ratio. A first groove and a second groove intersecting with the first groove are formed in a crystalline silicon substrate, an i-type first silicon semiconductor layer, a second silicon semiconductor layer with one conductivity type, and a light-transmitting conductive film are sequentially formed on the surface of the crystalline silicon substrate and on the grooves, a conductive resin is injected into the first groove, and the second groove is filled with the conductive resin by a capillary action to form a grid electrode.

First claim

What is claimed is:

1. A photoelectric conversion device comprising:
a first groove provided over one side of a crystalline silicon substrate;
a second groove intersecting with the first groove;
a first silicon semiconductor layer over the first groove, the second groove and the one side of the crystalline silicon substrate;
a second silicon semiconductor layer over the first silicon semiconductor layer, the second silicon semiconductor layer having one conductivity type;
a third silicon semiconductor layer over another side of the crystalline silicon substrate;
a fourth silicon semiconductor layer over the third silicon semiconductor layer, the fourth silicon semiconductor layer having a conductivity type opposite to the one conductivity type;
a rear electrode over the fourth silicon semiconductor layer;
an embedded grid electrode comprising a conductive resin in the first groove and the second groove, wherein the grid electrode is in contact with the second silicon semiconductor layer, and wherein a top surface of the grid electrode is aligned with a top surface of the second silicon semiconductor layer; and
a light-transmitting conductive film over the second silicon semiconductor layer and the grid electrode.

2. The photoelectric conversion device according to claim 1 , wherein the second groove is formed to be smaller in width than the first groove.

3. The photoelectric conversion device according to claim 1 , wherein the first and third silicon semiconductor layers have an i-type conductivity, and the second silicon semiconductor layer has a p-type or n-type conductivity.

4. The photoelectric conversion device according to claim 1 , further comprising a metal wire embedded in the conductive resin.

5. A photoelectric conversion device comprising:
a first groove provided over one side of a crystalline silicon substrate;
a second groove intersecting with the first groove;
a first silicon semiconductor layer over the first groove, the second groove and the one side of the crystalline silicon substrate;
a second silicon semiconductor layer over the first silicon semiconductor layer, the second silicon semiconductor layer having one conductivity type;
an embedded grid electrode comprising a conductive resin in the first groove and the second groove, wherein the grid electrode is in contact with the second silicon semiconductor layer, and wherein a top surface of the grid electrode is aligned with a top surface of the second silicon semiconductor layer; and
a light-transmitting conductive film over the second silicon semiconductor layer and the grid electrode.

6. The photoelectric conversion device according to claim 5 , wherein the second groove is formed to be smaller in width than the first groove.

7. The photoelectric conversion device according to claim 5 , wherein the first silicon semiconductor layer has an i-type conductivity, and the second silicon semiconductor layer has a p-type or n-type conductivity.

8. The photoelectric conversion device according to claim 5 , further comprising a metal wire embedded in the conductive resin.

Assignees

• Hirose Takashi
• Kusumoto Naoto
• Semiconductor Energy Lab

Inventors

• Hirose Takashi
• Kusumoto Naoto

Classifications

• H10F77/215

  Geometries of grid contacts · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F10/166

  the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells · CPC title

• H10F77/211 Primary

  for photovoltaic cells · CPC title

• H01L31/1804

  Electricity · mapped topic