High frequency module and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9337062-B2
Application number	US-201514620646-A
Country	US
Kind code	B2
Filing date	Feb 12, 2015
Priority date	Mar 17, 2014
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A high frequency module includes: a semiconductor chip provided over a first surface side of a resin layer; a first waveguide provided over the first surface side of the resin layer and sealed together with the semiconductor chip by a resin; a wire provided over a second surface side of the resin layer and electrically coupled to the semiconductor chip and extending to a position of the first waveguide; a second waveguide bonded to the first waveguide; and a metal plate provided over the first surface side of the resin layer at a position opposite to the first waveguide and electrically coupled to the wire, wherein a part of the wire extending to the position of the first waveguide serves as an antenna coupler.

First claim

What is claimed is:

1. A high frequency module, comprising:
a semiconductor chip provided over a first surface side of a first resin;
a first waveguide provided over the first surface side of the first resin and sealed together with the semiconductor chip by a second resin;
a wire provided over a second surface side of the first resin and electrically coupled to the semiconductor chip and extending to a position of the first waveguide;
a second waveguide bonded to the first waveguide; and
a metal plate provided over the first surface side of the first resin at a position opposite to the first waveguide and electrically coupled to the wire,
wherein a part of the wire extending to the position of the first waveguide serves as an antenna coupler.

2. The high frequency module according to claim 1 , further comprising:
a dielectric plate provided within the first waveguide.

3. The high frequency module according to claim 2 , wherein the dielectric plate is formed of any one material selected from a group consisting of benzocyclobutene, a liquid crystal polymer, a cycloolefin polymer, polyolefin, polyphenylene ether, polystyrene, and polytetrafluoroethylene.

4. The high frequency module according to claim 1 , wherein the wire is electrically coupled to the semiconductor chip through a via provided in the first resin.

5. The high frequency module according to claim 1 , wherein the first resin is formed of a dielectric film, and the dielectric film is formed of any one material selected from a group consisting of benzocyclobutene, a liquid crystal polymer, cycloolefin polymer, polyolefin, polyphenylene ether, polystyrene, and polytetrafluoroethylene.

Assignees

• Fujitsu Ltd
• Fujitsu Ltd

Inventors

• Iijima Shinya

Classifications

• H10W74/473

  containing a filler · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W72/9413

  on encapsulations · CPC title

• H10W72/0198

  batch processes · CPC title