Semiconductor devices and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9337031-B2
Application number	US-201414516603-A
Country	US
Kind code	B2
Filing date	Oct 17, 2014
Priority date	Jan 28, 2014
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and forming a source/drain layer in the trench, which includes providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (SEG) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and
forming a source/drain layer in the trench, including:
providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (SEG) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and
purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.

2. The method as claimed in claim 1 , wherein the silicon source gas includes dichlorosilane (SiH 2 Cl 2 ) gas, the germanium source gas includes germane (GeH 4 ) gas, the etching gas includes hydrogen chloride (HCl) gas, and the carrier gas includes hydrogen (H 2 ) gas.

3. The method as claimed in claim 2 , wherein a ratio of the etching gas with respect to the germanium source gas remaining in the chamber during at least an initial period of etching the silicon-germanium layer is higher than that during growing the silicon-germanium layer.

4. The method as claimed in claim 2 , wherein growing the silicon-germanium layer is performed by providing diborane (B 2 H 6 ) gas serving as a p-type impurity source gas into the chamber in addition to the silicon source gas, the germanium source gas, the etching gas and the carrier gas.

5. The method as claimed in claim 1 , wherein forming the source/drain layer includes:
forming a first silicon-germanium layer;
forming a second silicon-germanium layer on the first silicon-germanium layer, the second silicon-germanium layer having higher contents of germanium and boron than the first silicon-germanium layer; and
forming a silicon layer on the second silicon-germanium layer,
wherein forming the second silicon-germanium layer includes growing the second silicon-germanium layer and etching the second silicon-germanium layer.

6. The method as claimed in claim 1 , wherein growing the silicon-germanium layer and etching the silicon-germanium layer are each performed a plurality of times.

7. The method as claimed in claim 6 , wherein the trench is filled with the silicon-germanium layer after growing the silicon-germanium layer a plurality of times.

8. The method as claimed in claim 1 , wherein etching the silicon-germanium layer is performed at a temperature higher than that of growing the silicon-germanium layer.

9. The method as claimed in claim 1 , further comprising forming a plurality of dummy gate structures on the active fin prior to forming the trench,
wherein the trench is formed by removing an upper portion of the active fin not covered by the dummy gate structures.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Dong-Hyuk
• Shin Geo-Myung
• Shin Dong-Suk

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3451

  Structure · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3411 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title