Ion implantation device

US9336991B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9336991-B2
Application numberUS-201314420377-A
CountryUS
Kind codeB2
Filing dateSep 12, 2013
Priority dateSep 18, 2012
Publication dateMay 10, 2016
Grant dateMay 10, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The disclosed ion implantation apparatus has a vacuum chamber 11 , a roller electrode 13 having a portion of an outer circumferential part on which a film 3 is wound, voltage application unit 23 for applying a voltage to the roller electrode, and a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, wherein the gas introduction unit and a gas discharge outlet are disposed so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween.

First claim

Opening claim text (preview).

The invention claimed is: 1. An ion implantation apparatus comprises: a vacuum chamber, a roller electrode having a portion of an outer circumferential part on which a film is wound, voltage application means for applying a voltage to the roller electrode, a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, and a gas discharge outlet for discharging the gas present in the gas introduction unit and in the vacuum chamber, wherein the gas introduction unit and the gas discharge outlet are disposed so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween, the gas introduction unit is disposed so as to be separated from the roller electrode and be opposite a peripheral portion of an axial end of the roller electrode, and the gas supply outlets provided in the gas introduction unit are disposed so as to be opposite a peripheral portion of an axial end of the roller electrode. 2. The ion implantation apparatus according to claim 1 , wherein the gas introduction unit is provided with a plurality of gas supply outlets. 3. The ion implantation apparatus according to claim 2 , wherein the gas supply outlets are disposed so as to be separated from one another and be opposite a peripheral portion of an axial end of the roller electrode. 4. The ion implantation apparatus according to claim 3 , which has a flow straightening member disposed between the roller electrode and the inner wall of the vacuum chamber, along the direction of gas flow from the gas supply outlets to the gas discharge outlet. 5. The ion implantation apparatus according to claim 2 , which has a flow straightening member disposed between the roller electrode and the inner wall of the vacuum chamber, along the direction of gas flow from the gas supply outlets to the gas discharge outlet. 6. The ion implantation apparatus according to claim 1 , which has a flow straightening member disposed between the roller electrode and the inner wall of the vacuum chamber, along the direction of gas flow from the gas supply outlets to the gas discharge outlet. 7. The ion implantation apparatus according to claim 6 , wherein the flow straightening member is formed of a conductive metal. 8. The ion implantation apparatus according to claim 1 , wherein the gas introduction unit has a circular cross-section similar to the generally circular cross-section of the roller electrode. 9. The ion implantation apparatus according to claim 1 , wherein the gas introduction unit curves along the circumferential direction of the roller electrode.

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What does patent US9336991B2 cover?
The disclosed ion implantation apparatus has a vacuum chamber 11 , a roller electrode 13 having a portion of an outer circumferential part on which a film 3 is wound, voltage application unit 23 for applying a voltage to the roller electrode, and a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, wherein the gas introduction …
Who is the assignee on this patent?
Lintec Corp
What technology area does this patent fall under?
Primary CPC classification C23C14/48. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 10 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).