Method for creating S/TEM sample and sample structure

Patent metadata

Field	Value
Publication number	US-9336985-B2
Application number	US-201514684825-A
Country	US
Kind code	B2
Filing date	Apr 13, 2015
Priority date	Oct 20, 2006
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. A novel sample structure and a novel use of a milling pattern allow the creation of S/TEM samples as thin as 50 nm without significant bowing or warping. Preferred embodiments of the present invention provide methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.

First claim

We claim as follows:

1. A method of forming a lamella for observation on a TEM, comprising:
depositing a protective layer onto a surface of a sample;
milling the surface of the sample on at least one side of a region of interest with a charged particle beam as part of a process of forming a lamella;
forming a charged particle beam image of the sample as milled;
using image recognition software to perform an analysis of the image of the milled sample, the analysis of the image comprising determining at least one specified criterion;
if the at least one specified criterion is not met, automatically repeating the steps of:
milling the surface of the sample on at least one side of the region of interest with the charged particle beam, wherein the milling process is adjusted based on the analysis of the image.

2. The method of claim 1 where the sample comprises a semiconductor wafer.

3. The method of claim 1 wherein milling the surface of the sample on at least one side of a region of interest comprises milling the surface of the sample on at least one side of a region of interest leaving a thin layer of material less than 500 nm thick.

4. The method of claim 1 wherein milling the surface of the sample on at least one side of a region of interest comprises milling the surface of the sample on at least one side of a region of interest leaving a thin layer of material less than 100 nm thick.

5. The method of claim 1 in which the thickness of the lamella once the at least one specified criterion becomes met is less than 100 nm thick.

6. A system for extracting a sample from a substrate, comprising:
a sample stage for supporting the substrate;
a charged particle beam source for producing charged particle beam to mill a substrate; and
a controller programmed to control the charged particle beam source and the stage to carry out the method of claim 1 .

7. The method of claim 1 in which the at least one specified criterion comprises a specified position for the lamella.

8. The method of claim 1 in which the at least one specified criterion comprises the minimum desired lamella width.

9. The method of claim 1 in which forming a charged particle beam image of the region of interest comprises imaging the region of interest from the top down.

10. The method of claim 1 in which the adjusting the milling process comprises varying the dwell time or the step size of the charged particle beam.

11. The method of claim 1 in which adjusting the milling process does not include adjusting the beam angle, energy, current, current density, or diameter of the charged particle beam.

12. The method of claim 1 further comprising directing a charged particle beam toward the surface of the sample to form a reference fiducial at a known position relative to a region of interest.

13. The method of claim 12 in which directing a charged particle beam toward the surface of the sample to form a reference fiducial at a known position relative to a region of interest comprises manually locating the known position.

14. The method of claim 12 in which:
the known position relative to a region of interest is determined using CAD data; and
directing the charged particle beam toward the surface of the sample to form a reference fiducial at a known position comprises determining the known position on the substrate using pattern recognition based upon geometric information from the CAD data.

15. The method of claim 1 in which milling the surface of the sample on at least one side of a region of interest with a charged particle beam comprises directing a substantially normal charged particle beam in a milling pattern that mills the surface of the substrate in a series of passes, each pass comprising moving the beam in a raster pattern.

16. A method of forming a specimen for viewing on a transmission electron microscope:
depositing a protective layer onto a sample surface;
directing a charged particle beam toward the sample surface to form a reference fiducial at a known position relative to a region of interest;
milling a first trench on a first side of the region of interest, the position of the edge of the first trench closest to the feature of interest being determined relative to the fiducial;
milling a second trench on the second side of the region of interest, the unmilled region between the first trench and the second trench forming a lamella; and
forming a window containing the region of interest in the lamella by:
milling a first notch in a first side of the lamella by scanning a charged particle beam in a raster pattern, the scan speed of the charged particle beam decreasing as lines in the raster pattern approach the region of interest; and
milling a second notch in a second side of the lamella by scanning a charged particle beam in a raster pattern, the scan speed of the charged particle beam decreasing as lines in the raster pattern approach the region of interest, thereby leaving a window containing the region of interest between the two notches.

Assignees

• Fei Co

Inventors

• Blackwood Jeffrey
• Stone Stacey

Classifications

• G01N1/32

  Polishing; Etching · CPC title

• H01J37/3056

  for microworking, e. g. etching of gratings or trimming of electrical components · CPC title

• H01J2237/31749

  Focused ion beam · CPC title

• G01N1/08

  involving an extracting tool, e.g. core bit · CPC title

• H01J37/28 Primary

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title