Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same

Patent metadata

Field	Value
Publication number	US-9334161-B2
Application number	US-201013499462-A
Country	US
Kind code	B2
Filing date	Sep 29, 2010
Priority date	Oct 2, 2009
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

First claim

The invention claimed is:

1. A method for producing a fine metal structure, comprising:
wet etching or dry etching,
rinsing contamination formed after said wet etching or dry etching,
subsequently rinsing with a processing liquid,
rinsing with pure water after rinsing with said processing liquid, and
drying immediately after said rinsing with pure water,
wherein the processing liquid comprises at least one compound selected from the group consisting of:
an imidazolium halide comprising an alkyl group containing 12, 14, or 16 carbon atoms;
a pyridinium halide comprising an alkyl group containing 14 or 16 carbon atoms;
a betaine comprising an alkyl group containing 12, 14, or 16 carbon atoms; and
an amine oxide comprising an alkyl group containing 14, 16, or 18 carbon atoms,
wherein a content of said at least one compound in the processing liquid is from 10 ppm to 10% by mass.

2. The method of claim 1 ,
wherein a pattern of the fine metal structure comprises tungsten.

3. The method of claim 1 , wherein the fine metal structure is a semiconductor device or a micromachine.

4. The method of claim 1 , wherein the processing liquid comprises at least one compound selected from the group consisting of:
an imidazolium halide comprising a dodecyl group, a tetradecyl group, or a hexadecyl group;
a pyridinium halide comprising a tetradecyl group or a hexadecyl group;
a betaine comprising a dodecyl group, a tetradecyl group, or a hexadecyl group; and
an amine oxide comprising a tetradecyl group, a hexadecyl group, or an octadecyl group.

5. The method of claim 1 , wherein a content of the at least one compound in the processing liquid is from 10 ppm to 1000 ppm.

6. The method of claim 1 , wherein the processing liquid comprises dodecyldimethylaminoacetic acid betaine, palm oil fatty acid amide propylbetaine, or both, as a betaine.

7. The method of claim 1 , wherein the processing liquid comprises dimethyltetradecylamine oxide, dimethylhexadecylamine oxide, dimethyloctadecylamine oxide, or a combination thereof, as an amine oxide.

8. The method of claim 1 , wherein the processing liquid comprises an imidazolium halide comprising a C14 or C16 alkyl group.

9. The method of claim 1 , wherein the processing liquid comprises an imidazolium halide comprising a C16 alkyl group.

10. The method of claim 1 , wherein the processing liquid comprises a pyridinium halide comprising a C16 alkyl group.

11. The method of claim 1 , wherein the processing liquid comprises an amine oxide comprising a C16 or C18 alkyl group.

12. The method of claim 1 , wherein a content of the at least one compound in the processing liquid is from 10 ppm to 5% by mass.

13. The method of claim 1 , wherein said processing liquid further comprises water.

14. The method of claim 1 , comprising, in the following order:
wet etching or dry etching to provide etched portions,
rinsing contamination formed after said wet etching or dry etching,
filling said etched portions and producing a fine metal structure,
a first rinsing of said fine metal structure with pure water immediately after said producing said fine metal structure,
a rinsing of said fine metal structure with said processing liquid immediately after said first rinsing,
a second rinsing of said fine metal structure with pure water immediately after said rinsing with said processing liquid, and
drying immediately after said second rinsing with pure water.

Assignees

• Ohto Masaru
• Matsunaga Hiroshi
• Yamada Kenji
• Mitsubishi Gas Chemical Co

Inventors

• Ohto Masaru
• Matsunaga Hiroshi
• Yamada Kenji

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• C09K13/00

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• H01L21/02057

  Electricity · mapped topic

• C23G1/26

  using inhibitors · CPC title

• B81C1/0092 Primary

  For avoiding stiction during the manufacturing process of the device, e.g. during wet etching · CPC title