Optoelectronic devices with organometal perovskites with mixed anions
US-2015136232-A1 · May 21, 2015 · US
US9331292B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9331292-B2 |
| Application number | US-201414448053-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 31, 2014 |
| Priority date | Nov 26, 2013 |
| Publication date | May 3, 2016 |
| Grant date | May 3, 2016 |
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Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
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What is claimed is: 1. A photovoltaic device comprising: a first electrode; a second electrode; and an active layer disposed at least partially between the first and second electrodes, the active layer comprising NiO, a perovskite material, and a ZnO interfacial layer disposed between the second electrode and the NiO, wherein the perovskite material has the formula CMX3 and is disposed between the NiO and the ZnO, and is further adjacent to and in contact; wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof; wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof; and wherein X comprises one or more anions each selected from the group consisting of halides, sulfide, selenide, and combinations thereof. 2. The photovoltaic device of claim 1 , wherein C is methylammonium, M is Pb, and wherein X comprises one or more halides. 3. The photovoltaic device of claim 1 , wherein C is methylammonium, M is Sn, and wherein X comprises one or more halides. 4. The photovoltaic device of claim 1 , wherein C is a formamidinium, M is Pb, and wherein X comprises one or more halides. 5. The photovoltaic device of claim 1 , wherein C is a formamidinium, M is Sn, and wherein X comprises one or more halides. 6. The photovoltaic device of claim 1 wherein the NiO is a mesoporous material. 7. The photovoltaic device of claim 1 wherein the NiO forms at least a part of an interfacial layer. 8. The photovoltaic device of claim 1 wherein the NiO is proximate to the first electrode and the ZnO is proximate to the second electrode; and further wherein the first electrode is an anode and the second electrode is a cathode. 9. The photovoltaic device of claim 1 wherein the ZnO is a mesoporous material. 10. The photovoltaic device of claim 9 wherein the NiO is proximate to the first electrode and the ZnO is proximate to the second electrode; and further wherein the first electrode is an anode and the second electrode is a cathode. 11. The photovoltaic device of claim 1 , further comprising a charge transport material comprising P3HT. 12. A photovoltaic device comprising: a first electrode; a second electrode; and an active layer disposed at least partially between the first and second electrodes, the active layer comprising: a first interfacial layer comprising NiO; a second interfacial layer comprising ZnO; a charge transport material disposed adjacent to and in contact with the NiO; and a photoactive layer disposed between, and adjacent to and in contact with, the second interfacial layer and the first interfacial layer, the photoactive layer comprising a perovskite having the formula CMX3; wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof; wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof; and wherein X comprises one or more anions each selected from the group consisting of halides, sulfide, selenide, and combinations thereof. 13. The photovoltaic device of claim 12 , wherein C is methylammonium, M is Pb, and wherein X comprises one or more halides. 14. The photovoltaic device of claim 12 , wherein C is methylammonium, M is Sn, and wherein X comprises one or more halides. 15. The photovoltaic device of claim 12 , wherein C is a formamidinium, M is Pb, and wherein X comprises one or more halides. 16. The photovoltaic device of claim 12 , wherein C is a formamidinium, M is Sn, and wherein X comprises one or more halides. 17. The photovoltaic device of claim 12 , wherein: the first interfacial layer is closer to the first electrode than is the second interfacial layer; the second interfacial layer is closer to the second electrode than is the first interfacial layer; and the first electrode is an anode and the second electrode is a cathode. 18. The photovoltaic device of claim 12 , wherein the charge transport material comprises P3HT.
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