Semiconductor layer sequence, optoelectronic semiconductor chip and method for producing a semiconductor layer sequence

Patent metadata

Field	Value
Publication number	US-9331238-B2
Application number	US-201214348587-A
Country	US
Kind code	B2
Filing date	Aug 22, 2012
Priority date	Sep 29, 2011
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

In at least one embodiment, the semiconductor layer sequence ( 1 ) is provided for an optoelectronic semiconductor chip ( 10 ). The semiconductor layer sequence ( 1 ) contains at least three quantum wells ( 2 ) which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence ( 1 ) includes a plurality of barrier layers ( 3 ), of which at least one barrier layer is arranged between two adjacent quantum wells ( 2 ) in each case. The quantum wells ( 2 ) have a first average indium content and the barrier layers ( 3 ) have a second, smaller, average indium content. A second average lattice constant of the barrier layers ( 3 ) is thereby smaller than a first average lattice constant of the quantum wells ( 2 ).

First claim

The invention claimed is:

1. Semiconductor layer sequence for an optoelectronic semiconductor chip having
at least three quantum wells which are arranged to generate electromagnetic radiation and are arranged one above the other in a direction of growth of the semiconductor layer sequence,
a plurality of barrier layers, of which at least one barrier layer is arranged between two adjacent quantum wells in each case,
wherein
the quantum wells have a first average indium content and the barrier layers have a second, smaller, average indium content,
a second average lattice constant of the barrier layers is smaller than a first average lattice constant of the quantum wells,
the indium content is averaged over all quantum wells and/or barrier layers, the semiconductor layer sequence is based on (Al x Ga 1-X ) 1-y In y P, where 0<x≦1, wherein the quantum wells satisfy the condition: 0.51≦y≦0.7, and the barrier layers satisfy the condition: 0.3≦y≦0.49, and
wherein the semiconductor layer sequence is arranged to generate radiation at a wavelength between 595 nm and 625 nm inclusive.

2. Semiconductor layer sequence according to claim 1 , wherein the quantum wells satisfy the condition: 0.53≦y≦0.6, and the barrier layers satisfy the condition: 0.4≦y≦0.47.

3. Semiconductor layer sequence according to claim 1 , wherein a thickness D 3 of one of the barrier layers and a thickness D 2 of the associated quantum well satisfy the condition: 0.75≦D 3 /D 2 ≦7.5.

4. Semiconductor layer sequence according to claim 1 , wherein at least two of the quantum wells are arranged to emit radiation at mutually different wavelengths.

5. Semiconductor layer sequence according to claim 1 , which comprises a plurality of quantum wells of a first group which are arranged to emit at a first wavelength λ1, and which further comprises a plurality of quantum wells of a second group which are arranged to emit at a second wavelength λ2, wherein λ1<λ2 and 2 nm≦λ2−λ1≦15 nm and the first group has a greater number of quantum wells than the second group, and wherein the groups are arranged successively in the growth direction and the first group is located closer to an n-side of the semiconductor layer sequence than the second group.

6. Semiconductor layer sequence according to claim 5 , wherein the barrier layers within at least one of the groups of quantum wells are formed identically.

7. Semiconductor layer sequence according to claim 1 , wherein at least two of the barrier layers, which are located between two adjacent quantum wells in each case, have mutually different thicknesses and/or mutually different material compositions.

8. Semiconductor layer sequence according to claim 7 , wherein the barrier layers which are located closer to the n-side of the semiconductor layer sequence have a larger barrier height than the barrier layers on a p-side of the semiconductor layer sequence.

9. Semiconductor layer sequence according to claim 1 , wherein a ratio E B /λ of the barrier heights E B of the barrier layers and the wavelengths λ—the respectively associated quantum wells being arranged to emit at this wavelength—increases monotonically in the growth direction and in the direction away from the n-side.

10. Optoelectronic semiconductor chip having
a semiconductor layer sequence according to claim 1 , and
a substrate, on which the semiconductor layer sequence is arranged,
wherein the second average lattice constant of the barrier layers is smaller than an average substrate lattice constant of the substrate and the first average lattice constant of the quantum wells is higher than the substrate lattice constant.

11. Method for producing a semiconductor layer sequence for an optoelectronic semiconductor chip having
at least three quantum wells which are arranged to generate electromagnetic radiation and are arranged one above the other in a direction of growth of the semiconductor layer sequence,
a plurality of barrier layers, of which at least one barrier layer is arranged between two adjacent quantum wells in each case,
a plurality of quantum wells of a first group which are arranged to emit at a first wavelength λ1, and
a plurality of quantum wells of a second group which are arranged to emit at a second wavelength λ2,

wherein
the quantum wells have a first average indium content and the barrier layers have a second, smaller, average indium content,
a second average lattice constant of the barrier layers is smaller than a first average lattice constant of the quantum wells,
λ1<λ2 and 2 nm≦λ2−λ1≦15 nm
the indium content is averaged over all quantum wells and/or barrier layers, the semiconductor layer sequence is based on (Al x Ga 1-X ) 1-y In y P, where 0≦x≦1, wherein the quantum wells satisfy the condition: 0.51≦y≦0.7, and the barrier layers satisfy the condition: 0.3≦y≦0.49,

the method comprising the steps of:
providing a growth substrate, and
epitaxially and alternately growing at least three quantum wells and a plurality of barrier layers, wherein the quantum wells are provided for generating electromagnetic radiation and at least one of the barrier layers is grown between two adjacent quantum wells, wherein
the quantum wells have a first average indium content and the barrier layers have a second, smaller, average indium content,
the barrier layers are grown with a second average lattice constant which is smaller than a substrate lattice constant of the growth substrate, and
the quantum wells are grown with a first average lattice constant which is higher than the substrate lattice constant.

12. Method according to claim 11 , wherein the growth substrate is a GaAs substrate.

13. Semiconductor layer sequence for an optoelectronic semiconductor chip having
at least three quantum wells which are arranged to generate electromagnetic radiation and are arranged one above the other in a direction of growth of the semiconductor layer sequence,
a plurality of barrier layers, of which at least one barrier layer is arranged between two adjacent quantum wells in each case,
a plurality of quantum wells of a first group which are arranged to emit at a first wavelength λ1, and
a plurality of quantum wells of a second group which are arranged to emit at a second wavelength λ2,
wherein
the quantum wells have a first average indium content and the barrier layers have a second, smaller, average indium content,
a second average lattice constant of the barrier layers is smaller than a first average lattice constant of the quantum wells,
λ1<λ2 and 2 nm≦λ2−λ1≦15 nm
the indium content is averaged over all quantum wells and/or barrier layers, the semiconductor layer sequence is based on Al x Ga 1-X ) 1-y In y P, where 0≦x≦1, wherein the quantum wells satisfy the condition: 0.51≦y≦0.7, and the barrier layers satisfy the condition: 0.3≦y≦0.49.

14. Semiconductor layer sequence according to claim 13 , wherein
the first group of quantum wells has a greater number of quantum wells than the second group of quantum wells,
the groups are arranged successively in the growth direction,
the first group is located closer to an n-side of the semiconductor layer sequence than the second group, and
at least two of the barrier layers, which are located between two adjacent quantum wells in each case, have mutually different thicknesses and/or mutually different material compositions.

15. Semiconductor layer sequence according to claim 1 , wherein the entire semiconductor layer sequence and/or the barrier layers and/or the quantum wells satisfy the following condition: 0.45≦x≦1.

Assignees

• Tångring Ivar
• Behringer Martin Rudolf
• Osram Opto Semiconductors Gmbh

Inventors

• Tångring Ivar
• Behringer Martin Rudolf

Classifications

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/8242

  characterised by the dopants · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/815

  having stress relaxation structures, e.g. buffer layers · CPC title

• H10H20/013

  having light-emitting regions comprising only Group III-V materials · CPC title