Compound semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9331190-B2
Application number	US-201213718823-A
Country	US
Kind code	B2
Filing date	Dec 18, 2012
Priority date	Oct 2, 2009
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening is formed in the intermediate layer so as to be positionally aligned with the first opening, by wet etching using a hot phosphoric acid solution, and a gate electrode is formed so that the lower portion thereof fill the first and second openings while placing a gate insulating film in between, and so that the head portion thereof projects above the cap structure.

First claim

What is claimed is:

1. A compound semiconductor device comprising:
a channel layer containing a Group III-V nitride semiconductor;
an AlN layer formed over the channel layer, and having a first opening allowing the channel layer to expose therein;
an electron donor layer formed over the AlN layer, having a second opening allowing the channel layer to expose therein through the first opening, and containing a Group III-V nitride semiconductor; and
a gate electrode formed above the channel layer so as to fill the first opening and the second opening,
wherein a surface of the channel layer at the first opening side is formed with atomic layer steps.

2. The compound semiconductor device according to claim 1 , further comprising a first AlGaN layer, a second AlGaN layer, and a third AlGaN layer, stacked over the channel layer,
wherein the second AlGaN layer has an Al content larger than that in the first AlGaN layer and the third AlGaN layer.

3. The compound semiconductor device according to claim 1 ,
wherein the AlN layer is formed to have a thickness of 1 nm or larger and 2 nm or smaller.

4. The compound semiconductor device according to claim 1 ,
wherein the gate electrode is made wider in width in a portion thereof projected above the channel layer, than in a portion filled in the first opening and the second opening, so as to give a hammerhead-like cross section.

Assignees

• Fujitsu Ltd

Inventors

• Kanamura Masahito
• Kikkawa Toshihide

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D30/4755

  having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs · CPC title

• H10D30/015 Primary

  of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT · CPC title

• H10D30/47 Primary

  having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] · CPC title

• H01L29/7787

  Electricity · mapped topic