Semiconductor device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9330913-B2
Application number	US-91274410-A
Country	US
Kind code	B2
Filing date	Oct 27, 2010
Priority date	Jun 28, 2010
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

A semiconductor device includes first, second, and third conductive lines, each with a respective line portion formed over a substrate and extending in a first direction and with a respective branch portion extending from an end of the respective line portion in a direction different from the first direction. The branch portion of a middle conductive line is disposed between and shorter than the respective branch portions of the outer conductive lines such that contact pads may be formed integral with such branch portions of the conductive lines.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first structure including a first line portion extending in a first direction, and including a first branch portion extending from the first line portion in a second direction different from the first direction, wherein lines of said first and second directions define a plane parallel with a semiconductor substrate;
a second structure including a second line portion extending in the first direction, and including a second branch portion extending from the second line portion in a direction different from the first direction; and
a third structure including a third line portion extending in the first direction, and including a third branch portion with first and second parts extending from the third line portion in a direction different from the first direction,
wherein the first and second parts of the third branch portion are disposed between the first and second branch portions;
and wherein the third structure further includes a connection portion connecting the first and second parts of the third branch portion, and wherein facing edges of the connection portion and the third line portion are parallel along the first direction and are separated by a distance of a width of the third line portion;
and wherein the first branch portion and the first part of the third branch portion are disposed next to each other, and wherein the second branch portion and the second part of the third branch portion are disposed next to each other;
and wherein the first line portion and the third line portion are disposed next to each other, and wherein the second line portion and the third line portion are disposed next to each other,
and wherein the first and second branch portions extend along said second direction to respective points, and wherein the third branch portion extends along said second direction to a respective end point shorter than said respective points of the first and second branch portions, and wherein a material of said third branch portion is not formed beyond said respective end point of the third branch portion.

2. The semiconductor device of claim 1 , wherein the first, second, and third structures are comprised of a same material and are formed on said plane that is parallel with said semiconductor substrate.

3. The semiconductor device of claim 1 , wherein the first part of the third branch portion extends from a middle section of the third line portion, and wherein the second part of the third branch portion extends from an end of the third line portion.

4. The semiconductor device of claim 3 , wherein the first branch portion extends from an end of the first line portion, and wherein the second branch portion extends from an end of the second line portion.

5. The semiconductor device of claim 1 , further comprising,
a first contact pad formed to be integral with the first branch portion;
a second contact pad formed to be integral with the second branch portion; and
a third contact pad formed to be integral with the third branch portion.

6. The semiconductor device of claim 1 , wherein a distance between facing edges of the first and second parts of the third branch portion is greater than a distance between facing edges of the first branch portion and the first part of the third branch portion.

7. The semiconductor device of claim 6 , wherein a distance between facing edges of the first and second parts of the third branch portion is greater than a distance between facing edges of the second branch portion and the second part of the third branch portion.

8. The semiconductor device of claim 7 , wherein the first, second, and third structures have a first width.

9. The semiconductor device of claim 8 , wherein a distance between facing edges of the first and third structures is the first width, and wherein a distance between facing edges of the second and third structures is the first width.

10. The semiconductor device of claim 1 , further comprising,
a fourth structure including a fourth line portion extending in the first direction, and including a fourth branch portion extending from the fourth line portion in a direction different from the first direction;
wherein the fourth branch portion and the second branch portion are disposed next to each other;
and wherein a distance between the first and second parts of the third branch portion is greater than a distance between the fourth branch portion and the second branch portion;
and wherein the first, second, third, and fourth structures have a same width.

11. The semiconductor device of claim 10 , wherein the width of the fourth structure is same as a distance between the fourth branch portion and the second branch portion.

12. The semiconductor device of claim 10 , wherein a distance between the fourth branch portion and the second branch portion is same as the width of the first, second, third, and fourth structures.

13. A semiconductor device comprising:
a first structure comprised of a first material and formed on a first plane;
a second structure comprised of the first material and formed on the first plane; and
a third structure including a third line portion extending in a first direction and formed on the first plane, and including a third branch portion with first and second parts extending from the third line portion in a second direction different from the first direction and disposed between the first and second structures,
wherein the first plane is parallel to a semiconductor substrate, and wherein lines of said first and second directions define the first plane parallel with the semiconductor substrate;
wherein the first structure and the first part of the third branch portion are disposed next to each other;
and wherein the second structure and the second part of the third branch portion are disposed next to each other,
and wherein the third structure further includes a connection portion connecting the first and second parts of the third branch portion, and wherein facing edges of the connection portion and the third line portion are parallel along the first direction and are separated by a distance of a width of the third line portion;
and wherein the first and second structures include first and second branch portions extending along said second direction to respective points, and wherein the third branch portion extends along said second direction to a respective end point shorter than said respective points of the first and second branch portions, and wherein a material of said third branch portion is not formed beyond said respective end point of the third branch portion.

14. The semiconductor device of claim 13 , further comprising,
a first contact pad formed to be integral with the first structure;
a second contact pad formed to be integral with the second structure; and
a third contact pad formed to be integral with the third branch portion.

15. The semiconductor device of claim 14 , wherein the third branch portion further includes a third part that is the connection portion extending between the first and second parts of the third branch portion.

16. The semiconductor device of claim 15 , wherein the third contact pad is formed to be integral with the third part of the third branch portion.

Assignees

• You Jang-Hyun
• Lee Jong-Min
• Kwak Dong-Hwa
• Kim Tae-Yong
• Na Jong-Hoon
• Park Young-Woo
• Lee Dong-Sik
• Han Jee-Hoon
• Samsung Electronics Co Ltd

Inventors

• You Jang-Hyun
• Lee Jong-Min
• Kwak Dong-Hwa
• Kim Tae-Yong
• Na Jong-Hoon
• Park Young-Woo
• Lee Dong-Sik
• Han Jee-Hoon

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10W10/0143

  comprising concurrently refilling multiple trenches having different shapes or dimensions · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title