Plasma generation device with microstrip resonator

Patent metadata

Field	Value
Publication number	US-9330889-B2
Application number	US-201313939373-A
Country	US
Kind code	B2
Filing date	Jul 11, 2013
Priority date	Jul 11, 2013
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

A plasma generation device, a system including a plasma generation device, and a method of generating plasma and vacuum UV (VUV) photons are described. In a representative embodiment, plasma generation device, includes: a substrate having a first surface and a second surface; a resonant ring-shaped structure disposed over the first surface of the substrate, the resonant ring-shaped structure having dimensions selected to support at least one standing wave having more than one electric field maximum along a length of the resonant ring-shaped structure; a ground plane disposed on the second surface of the substrate; and an apparatus configured to provide a gas at locations of the electric field maxima.

First claim

We claim:

1. A plasma generation device, comprising:
a substrate having a first surface and a second surface;
a resonant ring-shaped structure disposed over the first surface of the substrate, the resonant ring-shaped structure having dimensions selected to support at least one standing wave having more than one electric field maximum along a length of the resonant ring-shaped structure;
a ground plane disposed on the second surface of the substrate; and
an apparatus configured to provide a gas at locations of the electric field maxima,
wherein when the resonant ring-shaped structure comprises a gap, electrodes on both sides of the gap are at equipotential.

2. The plasma generation device of claim 1 , further comprising electrode extensions connected to the resonant ring-shaped structure at a location of each of the electric field maxima.

3. The plasma generation device of claim 1 , wherein the resonant ring-shaped structure further comprises a microstrip transmission line.

4. The plasma generation device of claim 1 , wherein the apparatus comprises a gas flow element configured to provide gas over each of the locations of the electric field maxima.

5. The plasma generation device of claim 1 , further comprising:
a plurality of structures, each of which is disposed adjacent the first surface to form respective enclosures that substantially enclose each of the locations of the electric field maxima.

6. The plasma generation device of claim 2 , further comprising a plurality of structures, each of which is provided over a respective one of the electrode extensions, wherein each of the structures is configured to contain a plasma.

7. The plasma generation device of claim 2 , the microstrip transmission line having a void between the resonant ring-shaped structure and the ground plane, wherein gas is provided in the void to generate the plasma.

8. The plasma generation device of claim 1 , wherein the resonant ring-shaped structure is impedance matched at a resonance frequency to an impedance of a power source which provides microwave power to the resonant ring-shaped structure.

9. The plasma generation device of claim 2 , wherein the electrode extensions are disposed over the first surface of the substrate.

10. The plasma generation device of claim 9 , wherein each of the electric field maxima are located above a respective electrode extension.

11. The plasma generation device of claim 1 , wherein the resonant ring-shaped structure comprises a first ring concentric with a second ring, and the first ring is coupled to the second ring.

12. The device of claim 11 , wherein the first ring is a microstrip transmission line and the second ring is a microstrip transmission line.

13. A system, comprising:
a power source;
a gas feed line; and
a plasma generation device, comprising:
a substrate having a first surface and a second surface;
a resonant ring-shaped structure disposed over the first surface of the substrate, the resonant ring-shaped structure having dimensions selected to support at least one standing wave having more than one electric field maximum along a circumference of the resonant ring-shaped structure;
a ground plane disposed on the second surface of the substrate; and
an apparatus configured to provide a gas at locations of the electric field maxima,
wherein when the resonant ring-shaped structure comprises a gap, electrodes on both sides of the gap are at equipotential.

14. The system of claim 13 , further comprising electrode extensions connected to the resonant ring-shaped structure at a location of each of the electric field maxima.

15. The system of claim 13 , wherein the resonant ring-shaped structure further comprises one of a microstrip transmission line.

16. The system of claim 13 , wherein the apparatus comprises a gas flow element configured to provide gas over each of the locations of the electric field maxima.

17. The system of claim 13 , wherein the plasma generation device further comprises:
a plurality of structures, each of which is disposed adjacent the first surface to form respective enclosures that substantially enclose each of the locations of the electric field maxima.

18. The system of claim 14 , further comprising a plurality of structures, each of which is provided over a respective one of the electrode extensions, wherein each of the structures is configured to contain a plasma.

19. A method comprises:
providing a gas to a plasma generation device, the plasma generation device comprising:
a substrate having a first surface and a second surface;
a resonant ring-shaped structure disposed over the first surface of the substrate, the resonant ring-shaped structure having dimensions selected to support at least one standing wave having more than one electric field maximum; and
a ground plane disposed on the second surface of the substrate,

generating an electric field having the electric field maxima, wherein when the resonant ring-shaped structure comprises a gap, electrodes on both sides of the gap are at equipotential such that is vertically oriented;
providing the gas over the resonant ring-shaped structure at each of the electric field maxima; and
causing an electric discharge at locations of each of the electric field maxima sufficient to strike a plasma from the gas.

20. The method of claim 19 , further comprising producing a vacuum ultraviolet (VUV) light from the plasma.

Assignees

• Agilent Technologies Inc
• Agilent Technologies Inc

Inventors

• Denning Mark
• Vahidpour Mehrnoosh

Classifications

• H01J37/32247 Primary

  Resonators · CPC title

• H05H1/46

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

• H05H2001/4667

  Electricity · mapped topic

• H05H1/4652

  using inductive coupling means, e.g. coils · CPC title