Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device

Patent metadata

Field	Value
Publication number	US-9329433-B2
Application number	US-201113634030-A
Country	US
Kind code	B2
Filing date	Feb 22, 2011
Priority date	Mar 12, 2010
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

A metal line 731 is formed in a linear area S of an insulative substrate 720 , and moreover a metal line 732 is formed generally parallel to the metal line 731 with a specified distance thereto. The metal line 731 is connected to an n-type semiconductor core 701 of bar-like structure light-emitting elements 710 A to 710 D, and the metal line 732 is connected to a p-type semiconductor layer 702 . By dividing the insulative substrate 720 into a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elements 710 are placed on the divisional substrates are formed.

First claim

The invention claimed is:

1. A light-emitting device manufacturing method comprising:
a placement step for placing a plurality of light-emitting elements on one substrate;
an interconnection step for collectively connecting part or an entirety of metal lines to the plurality of light-emitting elements placed on the substrate; and
a substrate dividing step for, after the placement step and the interconnection step, dividing the substrate into a plurality of divisional substrates to form a plurality of light-emitting devices in which a plurality of light-emitting elements are placed on the divisional substrates;
wherein, in the interconnection step, each of the metal lines is placed so as to be connected to two or more of the light-emitting elements;
wherein each of the metal lines is connected to a same region of the light-emitting element in each of the two or more of the light-emitting elements;
wherein the metal lines are formed after the plurality of light-emitting elements are arranged on the substrate;
wherein the substrate is an insulative substrate, and the light-emitting elements have a maximum size of 50 μm or less; and
the insulative substrate is made of glass, ceramics, aluminum oxide or a resin.

2. The light-emitting device manufacturing method as claimed in claim 1 , wherein
the plurality of light-emitting elements are bar-like shaped, and
the plurality of light-emitting elements are placed on the mounting surface of the substrate so that a longitudinal direction of the plurality of light-emitting elements becomes parallel to the mounting surface of the substrate.

3. The light-emitting device manufacturing method as claimed in claim 2 , wherein
each of the bar-like light-emitting elements has a tubular-shaped light-emitting surface that concentrically surrounds a bar-like core.

4. The light-emitting device manufacturing method as claimed in claim 3 , wherein
each of the bar-like light-emitting elements has a first-conductive-type bar-like semiconductor core, and a second-conductive-type tubular-shaped semiconductor layer covering an outer periphery of the semiconductor core, and
a one-end side of the semiconductor core of the bar-like light-emitting element is exposed.

5. A light-emitting device manufacturing method comprising:
a placement step for placing a plurality of light-emitting elements on one substrate;
an interconnection step for collectively connecting part or an entirety of metal lines to the plurality of light-emitting elements placed on the substrate; and
a substrate dividing step for, after the placement step and the interconnection step, dividing the substrate into a plurality of divisional substrates to form a plurality of light-emitting devices in which a plurality of light-emitting elements are placed on the divisional substrates;
wherein each of the metal lines in each of the light-emitting devices is connected to three or more of the light-emitting elements;
wherein the substrate is an insulative substrate, and the light-emitting elements have a maximum size of 50 μm or less; and
the insulative substrate is made of glass, ceramics, aluminum oxide or a resin.

6. A light-emitting device manufacturing method comprising:
a placement step for placing a plurality of light-emitting elements on one substrate;
an interconnection step for collectively interconnecting part or an entirety of the plurality of light-emitting elements placed on the substrate; and
a substrate dividing step for, after the placement step and the interconnection step, dividing the substrate into a plurality of divisional substrates to form a plurality of light-emitting devices in which a plurality of light-emitting elements are placed on the divisional substrates,
wherein the plurality of light-emitting elements are bar-like shaped, and the plurality of light-emitting elements are placed on the mounting surface of the substrate so that a longitudinal direction of the plurality of light-emitting elements becomes parallel to the mounting surface of the substrate,
wherein each of the bar-like light-emitting elements has a tubular-shaped light-emitting surface that concentrically surrounds a bar-like core,
wherein each of the bar-like light-emitting elements has a first-conductive-type bar-like semiconductor core, and a second-conductive-type tubular-shaped semiconductor layer covers an outer periphery of the semiconductor core, and one-end side of the semiconductor core of the bar-like light-emitting element is exposed, and the semiconductor core projects from the semiconductor layer in an axial direction of the bar-like light-emitting element on the one-end side, and an outer periphery of the semiconductor core contacts an electrode.

7. The light-emitting device manufacturing method as claimed in claim 6 , wherein
in the placement step, the plurality of light-emitting elements are collectively placed on the one substrate.

8. The light-emitting device manufacturing method as claimed in claim 6 , wherein
an interconnect pattern for interconnecting the plurality of light-emitting elements is formed on the substrate, and
the interconnect pattern is not formed in cutting areas of the substrate involved in the substrate dividing step.

9. The light-emitting device manufacturing method as claimed in claim 6 , wherein
an interconnect pattern for interconnecting the plurality of light-emitting elements is formed on the substrate, and
the interconnect pattern that, even if cut off in the substrate dividing step, does not affect electrical connections is formed in cutting areas of the substrate.

10. The light-emitting device manufacturing method as claimed in claim 6 , wherein
the light-emitting elements are not placed in cutting areas of the substrate involved in the substrate dividing step.

11. The light-emitting device manufacturing method as claimed in claim 6 , wherein
out of the plurality of light-emitting elements, those light-emitting elements which, even if cut off in the substrate dividing step, have no influence on a desired light emission quantity are placed in cutting areas of the substrate.

12. The light-emitting device manufacturing method as claimed in claim 6 , further comprising:
a phosphor application step for, after the placement step and the interconnection step and before the substrate dividing step, applying a phosphor onto the substrate; and
a protective-film application step for, after the phosphor application step, applying a protective film onto the substrate.

13. The light-emitting device manufacturing method as claimed in claim 12 , wherein
in the phosphor application step, the phosphor is applied selectively to regions where the plurality of light-emitting elements are placed.

14. The light-emitting device manufacturing method as claimed in claim 6 , wherein
100 or more of the light-emitting elements are placed in each of the divisional substrates.

15. The light-emitting device manufacturing method as claimed in claim 6 , wherein
in the substrate dividing step, the substrate is divided into at least two or more types of the divisional substrates of different shapes.

16. The light-emitting device manufacturing method as claimed in claim 6 , wherein
the placement step for placing the plurality of light-emitting elements onto the substrate includes:
a substrate formation step for preparing the substrate having at least a first electrode and a second electrode on its mounting surface;
an application step for applying a solution containing the plurality of light-emitting elements onto the substrate; and
an array step for app

Assignees

• Negishi Tetsu
• Shibata Akihide
• Komiya Kenji
• Yoshioka Fumiyoshi
• Iwata Hiroshi
• Takahashi Akira
• Sharp Kk

Inventors

• Negishi Tetsu
• Shibata Akihide
• Komiya Kenji
• Yoshioka Fumiyoshi
• Iwata Hiroshi
• Takahashi Akira

Classifications

• G02F1/133603 Primary

  with LEDs · CPC title

• G02F1/133605

  including specially adapted reflectors · CPC title

• F21K9/00

  Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07554

  changes in dispositions · CPC title