Method and apparatus of highly linear optical modulation

Patent metadata

Field	Value
Publication number	US-9329413-B1
Application number	US-201414282904-A
Country	US
Kind code	B1
Filing date	May 20, 2014
Priority date	May 20, 2013
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

In a new optical intensity modulator, a nonlinear change in refractive index is used to balance the nonlinearities in the optical transfer function in a way that leads to highly linear optical intensity modulation.

First claim

What is claimed:

1. A method for operating an optical modulator of the kind that has a bias voltage and a bias phase as operational parameters, comprising:
selecting an operating point that consists of a bias voltage paired with a bias phase, wherein the selection is made from a parameter space of paired bias voltages and bias phases, and wherein the selection is more particularly made from a region of the parameter space that is designated a low-distortion region;
configuring the modulator to operate at the selected operating point by setting a base value of the bias voltage and setting at least one other parameter independent of the bias voltage; and
operating the optical modulator according to the selected operating point by transmitting at least part of an optical beam on a waveguiding path and applying the bias voltage across one or more p-n junctions that traverse the waveguiding path.

2. The method of claim 1 , wherein the bias-voltage-independent parameter is temperature.

3. The method of claim 1 , wherein the bias-voltage-independent parameter is wavelength of a modulated optical beam.

4. The method of claim 1 , further varying the bias voltage about the base value so as to modulate the optical beam.

5. The method of claim 1 , wherein the optical beam is split into two beams that traverse respective paths through the modulator and that are recombined when exiting the modulator, and wherein at least one of the beams traverses at least one p-n junction region.

6. The method of claim 1 , wherein the designated low-distortion region of the operational parameter space is designated as a region where third-order intermodulation distortion is suppressed.

7. The method of claim 1 , wherein the designated low-distortion region of the operational parameter space is a curve in said space, and the operating point is selected, at least in part, by referring to an accessible representation of the curve.

8. The method of claim 7 , wherein the operating point that consists of a bias voltage paired with a bias phase is selected by manually setting the bias voltage whereby a point on the curve is defined, and wherein the bias phase is automatically determined from the defined point on the curve.

9. The method of claim 7 , wherein the operating point that consists of a bias voltage paired with a bias phase is selected by manually setting the bias phase whereby a point on the curve is defined, and wherein the bias voltage is automatically determined from the defined point on the curve.

10. The method of claim 7 , wherein the accessible representation of the curve is a look-up table.

11. The method of claim 1 , wherein the operating point that consists of a bias voltage paired with a bias phase is selected, at least in part, by varying the bias phase and bias voltage to minimize an error signal.

12. Optical modulation apparatus, comprising:
at least one waveguiding path for an optical beam;
one or more p-n junction regions traversed by the waveguiding path;
an electrode arrangement for applying bias voltage across one or more said p-n junction regions; and
a control unit configured to select an operating point for the apparatus from a parameter space of paired bias voltages and bias phases, wherein the selection is made from a region of the parameter space that is designated a low-distortion region.

13. The apparatus of claim 12 , further comprising a heating element effective to vary a temperature in the waveguiding path, and wherein the control unit is configured to set the temperature according to a selected operating point.

14. The apparatus of claim 12 , wherein the control unit is configured to respond to a manually designated bias voltage by selecting a corresponding bias phase.

15. The apparatus of claim 14 , wherein, according to the selected bias phase, the control unit is configured to indicate a value of at least one other parameter independent of the bias voltage.

16. The apparatus of claim 15 , wherein the bias-voltage-independent parameter is temperature.

17. The apparatus of claim 15 , wherein the bias-voltage-independent parameter is wavelength of a modulated optical beam.

18. The apparatus of claim 12 , wherein the designated low-distortion region of the operational parameter space is designated as a region where third-order intermodulation distortion is suppressed.

19. The apparatus of claim 12 , further comprising a tangible medium in which is embodied a representation of a curve in the operational parameter space, and wherein the control unit is configured to select an operating point from said curve.

20. The apparatus of claim 19 , wherein the curve representation is embodied as a look-up table stored in a computer-readable memory.

21. The apparatus of claim 12 , further comprising a feedback circuit configured to generate an error signal representative of intermodulation distortion, wherein the error signal is fed back to the control unit, and wherein the control unit is configured to vary the operating point in a search for an operating point that minimizes the error signal.

22. The apparatus of claim 12 , wherein the apparatus comprises a Mach-Zehnder modulator having two interferometer arms, a respective said waveguiding path is defined in each of said arms, and at least one of the two waveguiding paths traverses one or more of said p-n junction regions.

23. The apparatus of claim 12 , wherein the apparatus comprises a micro-disk or micro-ring resonator, and the waveguiding path is defined within said resonator.

Assignees

• Sandia Corp

Inventors

• Derose Christopher
• Watts Michael R

Classifications

• G02F1/015

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title

• G02F2001/0151

  Physics · mapped topic

• G02F2001/212

  Physics · mapped topic

• G02F1/025

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/0123 Primary

  Circuits for the control or stabilisation of the bias voltage, e.g. automatic bias control [ABC] feedback loops · CPC title