Silicon photonics device and communication system therefor
US-2015309252-A1 · Oct 29, 2015 · US
Silicon photonics device and communication system therefor
US9329337B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9329337-B2 |
| Application number | US-201414262621-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2014 |
| Priority date | Apr 25, 2014 |
| Publication date | May 3, 2016 |
| Grant date | May 3, 2016 |
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Abstract
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A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon photonics device, the device comprising: a substrate member; a PBS (Polarization Beam Splitter) overlying the substrate member, the PBS having a TE+TM (Transverse Electric +Transverse Magnetic) input and a TE output and a TM output; a TE optimized demux (demultiplexer) overlying the substrate member, the TE optimized demux having a TE demux input coupled to the TE output, the TE optimized demux having a plurality of TE demux outputs; a TM opt…
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Physics · mapped topic
Physics · mapped topic
- G02B6/126Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9329337B2 cover?
- A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symm…
- Who is the assignee on this patent?
- Inphi Corp
- What technology area does this patent fall under?
- Primary CPC classification G02B6/126. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 03 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).