Scintillation crystal, a radiation detection system including the scintillation crystal, and a method of using the radiation detection system
US-2018010041-A1 · Jan 11, 2018 · US
Passivation of metal halide scintillators
US9328287B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9328287-B2 |
| Application number | US-201414153290-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 13, 2014 |
| Priority date | Jan 21, 2013 |
| Publication date | May 3, 2016 |
| Grant date | May 3, 2016 |
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Abstract
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A halide material, such as scintillator crystals of LaBr 3 :Ce and SrI 2 :Eu, with a passivation surface layer is disclosed. The surface layer comprises one or more halides of lower water solubility than the scintillator crystal that the surface layer covers. A method for making such a material is also disclosed. In certain aspects of the disclosure, a passivation layer is formed on a surface of a halide material such as a scintillator crystal of LaBr 3 :Ce of SrI 2 :Eu by fluorinating the surface with a fluorinating agent, such as F 2 for LaBr 3 :Ce and HF for SrI 2 :Eu.
First claim
Opening claim text (preview).
We claim: 1. A material, comprising: a crystal of a first metal halide; where the first metal halide is a scintillator material; wherein the first metal halide comprises LaBr 3 :Ce; and a surface layer on the first metal halide crystal comprising a second metal halide having a lower water solubility than the first metal halide; wherein the second metal halide comprises one or more of LaFBr 2 , LaF 2 Br and LaF 3 . 2. The material of claim 1 , wherein the surface layer is formed by fluorinating a surface of the crystal of the first metal halide with a fluorinating agent. 3. The material of claim 2 , wherein the fluorinating agent comprises one of more of F 2 , BF 3 , HF, PF 5 , SbF 5 , SF 4 , NF 3 , SiF 4 , WF 6 , interhalogen fluoride gases and xenon fluorides. 4. A method of making a material, comprising forming, on a surface of a crystal of a first metal halide, a layer of a second metal halide having a lower water solubility than the first metal halide; where the first metal halide is a scintillator material; wherein the first metal halide comprises LaBr 3 :Ce; and wherein the second metal halide comprises one or more of LaFBr 2 , LaF 2 Br and LaF 3 . 5. The method of claim 4 , wherein forming the layer comprises fluorinating the surface of the crystal of the first metal halide with one or more of F 2 , BF 3 , HF, PF 5 , SbF 5 , SF 4 , NF 3 , SiF 4 , WF 6 , interhalogen fluoride gases and xenon fluorides. 6. A material, comprising: a crystal of a first metal halide; where the first metal halide is a scintillator material that comprises SrI 2 :Eu; and wherein a surface layer is formed by fluorinating a surface of the scintillator material that comprises SrI 2 :Eu with HF. 7. A method of making a material, comprising forming, on a surface of a crystal of a first metal halide, a layer of a second metal halide having a lower water solubility than the first metal halide; where the first metal halide is a scintillator material that comprises SrI 2 :Eu; and where the second metal halide is obtained by fluorinating a surface of the scintillator material that comprises SrI 2 :Eu with HF.
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Classifications
- C09K11/7772Primary
Halogenides (C09K11/7767 takes precedence) · CPC title
Halogenides (C09K11/7701 takes precedence) · CPC title
with alkali or alkaline earth metals · CPC title
Halogenides (C09K11/7716 takes precedence) · CPC title
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- What does patent US9328287B2 cover?
- A halide material, such as scintillator crystals of LaBr 3 :Ce and SrI 2 :Eu, with a passivation surface layer is disclosed. The surface layer comprises one or more halides of lower water solubility than the scintillator crystal that the surface layer covers. A method for making such a material is also disclosed. In certain aspects of the disclosure, a passivation layer is formed on a surface o…
- Who is the assignee on this patent?
- Siemens Medical Solutions
- What technology area does this patent fall under?
- Primary CPC classification C09K11/7772. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 03 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).