Film-forming material for semiconductor, member-forming material for semiconductor, process member-forming material for semiconductor, underlayer film-forming material, underlayer film, and semiconductor device
US-2024352203-A1 · Oct 24, 2024 · US
US9328246B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9328246-B2 |
| Application number | US-201313743965-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 17, 2013 |
| Priority date | Jan 19, 2012 |
| Publication date | May 3, 2016 |
| Grant date | May 3, 2016 |
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Nonpolymeric compounds, compositions, and methods for forming microelectronic structures, and the structures formed therefrom are provided. The nonpolymeric compounds are ring-opened, epoxide-adamantane derivatives that comprise at least two epoxy moieties and at least one adamantyl group, along with at least one chemical modification group, such as a chromophore, bonded to a respective epoxy moiety. Anti-reflective and/or planarization compositions can be formed using these compounds and used in lithographic processes, including fabrication of microelectronic structures.
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What is claimed: 1. A planarizing and/or anti-reflective composition useful in forming microelectronic structures, said planarizing and/or anti-reflective composition comprising a nonpolymeric compound, a catalyst, and a crosslinking agent dispersed or dissolved in a solvent system, said nonpolymeric compound comprising at least two epoxy moieties and at least one adamantyl group, wherein at least one of said epoxy moieties is of the formula:…
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
Chemistry & Metallurgy · mapped topic
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