Power amplifier controller

Patent metadata

Field	Value
Publication number	US-9325281-B2
Application number	US-201314067019-A
Country	US
Kind code	B2
Filing date	Oct 30, 2013
Priority date	Oct 30, 2012
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

The present disclosure provides a power amplifier controller for starting up, operating, and shutting down a power amplifier. The power amplifier controller includes current sense amplifier circuitry adapted to monitor a main current of the power amplifier. A bias generator is also included and adapted to provide a predetermined standby bias voltage and an operational bias voltage based upon a main current level sensed by the current sense amplifier circuitry. The power amplifier controller further includes a sequencer adapted to control startup and shutdown sequences of the power amplifier. In at least one embodiment, the power amplifier is a gallium nitride (GaN) device, and the main current level sensed is a drain current of the GaN device. Moreover, the bias generator is a gate bias generator provided that the power amplifier is a field effect transistor (FET) device.

First claim

What is claimed is:

1. A power amplifier controller comprising:
current sense amplifier circuitry adapted to monitor a main current of a power amplifier;
a bias generator adapted to provide a predetermined standby bias voltage and operational bias voltage for the power amplifier based upon a main current level sensed by the current sense amplifier circuitry;
a sequencer adapted to control startup and shutdown sequences of the power amplifier; and
temperature compensation circuitry adapted to compensate a gate bias generator for ambient temperature fluctuations.

2. The power amplifier controller of claim 1 further including bypass circuitry to reroute the main current of the power amplifier around the current sense amplifier circuitry to eliminate efficiency losses due to the main current passing through the current sense amplifier circuitry.

3. The power amplifier controller of claim 1 wherein the power amplifier comprises enhancement mode field effect transistor (FET) devices.

4. The power amplifier controller of claim 1 wherein the power amplifier comprises depletion mode FET devices.

5. The power amplifier controller of claim 1 wherein the power amplifier comprises a combination of enhancement mode FET devices and depletion mode FET devices.

6. The power amplifier controller of claim 1 wherein the power amplifier comprises bipolar junction transistor (BJT) devices.

7. The power amplifier controller of claim 1 wherein the power amplifier comprises a combination of BJT devices and FET devices.

8. The power amplifier controller of claim 1 wherein the power amplifier comprises gallium nitride (GaN) devices.

9. The power amplifier controller of claim 1 further including direct current (DC) offset circuitry to automatically adjust a detection threshold for the current sense amplifier circuitry.

10. A method of controlling a power amplifier comprising:
driving a bias voltage of the power amplifier to a pinch off voltage;
applying a supply voltage to the power amplifier;
ramping the bias voltage in the direction of an operational voltage of the power amplifier;
monitoring a main current flowing to the power amplifier;
stopping the ramping of the bias voltage when the main current reaches a predetermined quiescent point; and
compensating the bias voltage for ambient temperature fluctuations.

11. The method of controlling the power amplifier of claim 10 further comprising applying a signal to be amplified by the power amplifier to the power amplifier.

12. The method of controlling the power amplifier of claim 10 further comprising:
dropping the bias voltage to the pinch off voltage; and
removing the supply voltage from the power amplifier.

13. The method of controlling the power amplifier of claim 12 further including removing a signal to be amplified by the power amplifier from the amplifier prior to dropping the bias voltage to the pinch off voltage.

14. The method of controlling the power amplifier of claim 10 further including rerouting the main current to the power amplifier around current sense amplifier circuitry to eliminate efficiency losses due to the main current passing through the current sense amplifier circuitry.

15. The method of controlling the power amplifier of claim 10 further including automatically adjusting a detection threshold for current sense amplifier circuitry that monitors a main current flowing to the power amplifier.

16. The method of controlling the power amplifier of claim 10 wherein the power amplifier comprises GaN devices.

17. The method of controlling the power amplifier of claim 10 wherein the power amplifier comprises enhancement mode FET devices.

18. The method of controlling the power amplifier of claim 10 wherein the power amplifier comprises depletion mode FET devices.

19. The method of controlling the power amplifier of claim 10 wherein the power amplifier comprises a combination of enhancement mode FET devices and depletion mode FET devices.

20. The method of controlling the power amplifier of claim 10 wherein the power amplifier comprises BJT devices.

21. The method of controlling the power amplifier of claim 10 wherein the power amplifier comprises a combination of FET devices and BJT devices.

Assignees

• Rf Micro Devices Inc

Inventors

• Levesque Chris
• Kobayashi Kevin Wesley
• Nadimpalli Praveen Varma
• Clark Ricke W

Classifications

• H03F2200/468

  the temperature being sensed · CPC title

• H03F3/193

  with field-effect devices (H03F3/195 takes precedence) · CPC title

• H03F3/21 Primary

  with semiconductor devices only {(H03F3/245 takes precedence)} · CPC title

• H03F2200/18

  the bias of the gate of a FET being controlled by a control signal · CPC title

• H03F1/523

  for amplifiers using field-effect devices (H03F1/526 takes precedence) · CPC title