Magnetic random access memory with multilayered seed structure
US-2015340598-A1 · Nov 26, 2015 · US
Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)
US9324939B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9324939-B2 |
| Application number | US-201414321516-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 1, 2014 |
| Priority date | Jul 1, 2014 |
| Publication date | Apr 26, 2016 |
| Grant date | Apr 26, 2016 |
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Abstract
Official abstract text for this publication.
A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.
First claim
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What is claimed is: 1. A magnetoresistive random access memory (MRAM) device, comprising: a first free ferromagnetic layer having a first magnetic moment; a synthetic antiferromagnetic (SAF) coupling layer disposed on the first free ferromagnetic layer, the first free ferromagnetic layer and the SAF coupling layer forming a first planar interfacing surface; and a second free ferromagnetic layer disposed on the SAF coupling layer, the second free ferromagnetic layer and the SAF…
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Physics · mapped topic
Electricity · mapped topic
- H01L43/10Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9324939B2 cover?
- A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling …
- Who is the assignee on this patent?
- Qualcomm Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L43/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).