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Boron carbide films exhibits extraordinary magnetoconductance and devices based thereon
US9324938B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9324938-B2 |
| Application number | US-201314098759-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 6, 2013 |
| Priority date | Dec 17, 2012 |
| Publication date | Apr 26, 2016 |
| Grant date | Apr 26, 2016 |
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Abstract
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Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1,4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and spin performance. These polymers may be deposited by any of a variety of techniques, and may be used in a wide variety of devices including magnetic tunnel junctions, spin-memristors and non-local spin valves.
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What is claimed is: 1. A composition of matter comprised of a boron carbide polymer which polymer is comprised of orthocarborane icosahedra cross-linked with a moiety A; wherein A is selected from the group consisting of benzene, pyridine, 1,4-diaminobenzene and mixtures thereof; and wherein said polymer exhibits a positive magnetoresistance effect of about 30%-80% at room temperature. 2. The composition of matter of claim 1 , wherein said polymer is doped with a transition metal at apex carbon sites in said polymer. 3. The composition of matter of claim 1 , wherein said polymer is deposited as an amorphous film on a substrate by plasma vapor deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition or by co-condensation of orthocarborane and a moiety A; wherein A is selected from the group consisting of benzene, pyridine and 1,4-diaminobenzene. 4. A magnetic tunnel junction comprising a barrier layer which is comprised of the composition of matter of claim 1 which barrier layer may be switched between a polarized and non-polarized state under an applied voltage. 5. A spin-memristor comprising a barrier material comprised of the composition of matter of claim 1 , wherein said barrier material exhibits a change in conductivity in response to a pulsed applied magnetic field, whereby said spin-memristor switches between states of low and high resistance. 6. A non-local spin valve comprising a channel of the composition of matter of claim 1 .
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- What does patent US9324938B2 cover?
- Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1,4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and spin performance. These polymers may be …
- Who is the assignee on this patent?
- Quantum Devices Llc, Univ North Texas
- What technology area does this patent fall under?
- Primary CPC classification H01L43/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).