Optoelectronic semiconductor component having a transparent oxide connector and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9324920-B2
Application number	US-201214348519-A
Country	US
Kind code	B2
Filing date	Sep 24, 2012
Priority date	Sep 30, 2011
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.

First claim

The invention claimed is:

1. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip;
an optical element; and
a connecting layer comprising a transparent oxide arranged between the semiconductor chip and the optical element, wherein the connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip;
wherein the optical element has at least one further channel that extends perpendicularly to a main extension plane of the connecting layer from a surface facing away from the semiconductor chip through into the optical element.

2. The semiconductor component according to claim 1 , wherein the connecting layer directly adjoins a surface of the semiconductor chip having a surface structure and/or a surface of the optical element having a surface structure.

3. The semiconductor component according to claim 2 , wherein the surface structure has at least one channel which extends in the surface from an edge region of the surface along a main extension plane of the surface to an inner region.

4. The semiconductor component according to claim 3 , wherein the channel has a length and a diameter wherein an aspect ratio of the length to the diameter is less than or equal to 500.

5. The semiconductor component according to claim 2 , wherein the surface structure has a plurality of channels.

6. The semiconductor component according to claim 5 , wherein the channels cross one another.

7. The semiconductor component according to claim 2 , wherein the surface structure has a roughening.

8. The semiconductor component according to claim 2 , wherein the surface structure has regularly arranged elevations.

9. The semiconductor component according to claim 2 , wherein the surface structure has lens-shaped and/or pyramidal elevations.

10. The semiconductor component according to claim 2 , wherein the semiconductor chip and the optical element each have a surface structure, the connecting layer being arranged between these surface structures and these surface structures intermeshing.

11. The semiconductor component according to claim 2 , wherein the surface structure has an average structure size that is less than or equal to twice a thickness of the connecting layer.

12. The semiconductor component according to claim 1 , wherein the connecting layer comprises a transparent conductive oxide and/or a dielectric oxide.

13. The semiconductor component according to claim 1 , further comprising a further optical element arranged on the optical element; and
a further connecting layer comprising a transparent oxide directly adjoining the optical element and the further optical element, the further connecting layer fixing the further optical element on the optical element.

14. A method for fabricating an optoelectronic semiconductor component, the method comprising:
arranging an optical element on a semiconductor chip; and
applying a connecting layer comprising a transparent oxide, the connecting layer applied, after the arranging the optical element on the semiconductor chip, by atomic layer deposition such that the connecting layer directly adjoins the semiconductor chip and the optical element and is disposed between the semiconductor chip and the optical element.

15. The method according to claim 14 , wherein
the semiconductor chip and the optical element are each provided as a plurality in an assemblage and arranged one on top of another, and
after the connecting layer has been applied, individual optoelectronic semiconductor components are detached from the assemblage by singulation.

16. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip;
an optical element; and
a connecting layer consisting of a transparent oxide arranged between the semiconductor chip and the optical element, the connecting layer directly adjoining the semiconductor chip and the optical element and fixing the optical element on the semiconductor chip;
wherein gaps between the optical element and the semiconductor chip, which are formed by arranging the optical element on the semiconductor chip, are partially filled.

17. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip;
an first optical element;
a first connecting layer comprising a first transparent oxide arranged between the semiconductor chip and the first optical element, wherein the first connecting layer directly adjoins the semiconductor chip and the first optical element and fixes the first optical element on the semiconductor chip;
a second optical element arranged on the first optical element; and
a second connecting layer comprising a second transparent oxide directly adjoining the first optical element and the second optical element, the second connecting layer fixing the second optical element on the first optical element.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Sabathil Matthias
• Ploessl Andreas
• Von Malm Norwin
• Linkov Alexander
• Hoeppel Lutz
• Koelper Christopher

Classifications

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/8506

  Containers · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title