Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures

Patent metadata

Field	Value
Publication number	US-9324911-B2
Application number	US-201213720284-A
Country	US
Kind code	B2
Filing date	Dec 19, 2012
Priority date	Dec 23, 2011
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride material into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) chamber.

First claim

What is claimed is:

1. A method of fabricating a photoactive device, comprising:
forming GaInN on a substrate within a chamber;
after forming the GaInN on the substrate, heating the GaInN in the chamber in the presence of an arsenic-containing gas or vapor and substituting As atoms for some N atoms within the GaInN to transform at least a portion of the GaInN into a homogeneous layer of GaInNAs;
repeating the actions of forming GaInN on the substrate within a chamber and heating the GaInN in the chamber in the presence of an arsenic-containing gas or vapor and substituting As atoms for some N atoms within the GaInN to transform at least a portion of the GaInN into homogeneous GaInNAs, so as to increase a thickness of the layer of the homogeneous GaInNAs; and
forming a pn-junction in the layer of the homogeneous GaInNAs.

2. The method of claim 1 , further comprising selecting the arsenic-containing gas or vapor to comprise AsR 3 , wherein each R is individually selected from the group consisting of hydrogen, alkyl, aryl, and vinyl groups.

3. The method of claim 2 , further comprising selecting the arsenic-containing gas or vapor to comprise at least one of arsine and a metalorganic arsine precursor.

4. The method of claim 3 , further comprising selecting the arsenic-containing gas or vapor to comprise arsine.

5. The method of claim 3 , further comprising selecting the arsenic-containing gas or vapor to comprise tertiarybutylarsine.

6. The method of claim 5 , further comprising decomposing the tertiarybutylarsine in the chamber to form at least one of AsH and AsH 3 .

7. The method of claim 6 , wherein heating the GaInN in the chamber in the presence of the arsenic-containing gas or vapor further comprises heating the GaInN in the chamber in the presence of ammonia.

8. The method of claim 1 , wherein heating the GaInN in the chamber in the presence of an arsenic-containing gas or vapor comprises heating the GaInN in the chamber to at least about 500° C.

9. The method of claim 8 , wherein heating the GaInN in the chamber to at least about 500° C. comprises heating the GaInN in the chamber to at least about 600° C.

10. The method of claim 1 , wherein forming the GaInN on the substrate within the chamber comprises epitaxially growing the GaInN on the substrate within the chamber.

11. The method of claim 10 , wherein epitaxially growing the GaInN on the substrate within the chamber comprises employing a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) process to epitaxially grow the GaInN on the substrate within the chamber.

12. The method of claim 11 , further comprising selecting the substrate to comprise GaN, and wherein epitaxially growing the GaInN on the substrate within the chamber comprises epitaxially growing the GaInN directly on the GaN.

13. The method of claim 1 , wherein the GaInNAs comprises Ga 1-y In y N x As 1-x , wherein y is greater than 0.0 and less than 1.0, and x is between about 0.1 and about 0.5.

14. The method of claim 1 , wherein the GaInNAs exhibits a bandgap energy of between about 0.9 eV and about 1.2 eV.

15. The method of claim 1 , further comprising forming a multijunction photovoltaic cell comprising the GaInNAs.

16. The method of claim 1 , further comprising forming a light-emitting device comprising the GaInNAs.

17. The method of claim 16 , further comprising forming the light-emitting device to comprise a laser diode.

18. A method of fabricating a photoactive device, comprising:
epitaxially growing a GaInN layer in a chamber;
heating the GaInN layer in the chamber to at least 500° C.;
after epitaxially growing the GaInN layer in the chamber, introducing at least one gas or vapor comprising As atoms into the chamber;
converting at least a portion of the GaInN layer into a homogeneous GaInNAs layer;
repeating the actions of epitaxially growing a GaInN layer in a chamber, heating the GaInN layer in the chamber to at least 500° C. and converting at least a portion of the GaInN layer into a homogeneous GaInNAs layer so as to increase a thickness of the layer of the homogeneous GaInNAs; and
forming a pn-junction in the layer of the homogeneous GaInNAs.

19. The method of claim 18 , wherein epitaxially growing the GaInN layer in the chamber comprises employing a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) process to grow the GaInN layer in the chamber.

20. The method of claim 18 , wherein introducing at least one gas or vapor comprising As atoms into the chamber comprises introducing at least one of arsine and a metalorganic arsine precursor into the chamber.

21. The method of claim 20 , wherein introducing at least one of arsine and a metalorganic arsine precursor into the chamber comprises introducing tertiarybutylarsine into the chamber.

22. The method of claim 18 , further comprising introducing ammonia into the chamber while introducing the at least one gas or vapor comprising As atoms into the chamber.

23. The method of claim 18 , wherein heating the GaInN layer in the chamber to at least 500° C. comprises heating the GaInN layer in the chamber to at least 600° C.

24. The method of claim 18 , wherein epitaxially growing the GaInN layer in the chamber comprises epitaxially growing the GaInN layer on a substrate comprising GaN in the chamber.

25. The method of claim 18 , wherein the GaInNAs layer comprises Ga 1-y In y N x As 1-x , wherein y is greater than 0.0 and less than 1.0, and x is between about 0.1 and about 0.5.

26. The method of claim 25 , wherein the GaInNAs layer exhibits a bandgap energy of between about 0.9 eV and about 1.2 eV.

27. The method of claim 18 , further comprising forming a multi-junction photovoltaic cell comprising the GaInNAs layer.

28. The method of claim 18 , further comprising forming a light-emitting device comprising the GaInNAs layer.

29. The method of claim 28 , further comprising forming the light-emitting device to comprise a laser diode.

Assignees

• Soitec Silicon On Insulator

Inventors

• Arena Chantal
• Scott Robin
• Canizares Claudio

Classifications

• H10P14/3421

  Arsenides · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2921 Primary

  being crystalline insulating materials · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title