Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9324878-B2
Application number	US-201414570565-A
Country	US
Kind code	B2
Filing date	Dec 15, 2014
Priority date	Mar 6, 2009
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

First claim

What is claimed is:

1. A semiconductor device comprising a transistor, the transistor comprising:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a source electrode electrically connected to the second oxide semiconductor layer; and
a drain electrode electrically connected to the second oxide semiconductor layer,
wherein the first oxide semiconductor layer comprises a channel formation region,
wherein the second oxide semiconductor layer comprises a first region overlapping with the channel formation region,
wherein the second oxide semiconductor layer comprises a second region in contact with the source electrode,
wherein the second oxide semiconductor layer comprises a third region in contact with the drain electrode,
wherein the first region is located between the second region and the third region,
wherein a thickness of the first oxide semiconductor layer is larger than a thickness of the second oxide semiconductor layer,
wherein the first region has a first electrical conductivity,
wherein the second region has a second electrical conductivity,
wherein the third region has a third electrical conductivity, and
wherein each of the second electrical conductivity and the third electrical conductivity is higher than the first electrical conductivity.

2. The semiconductor device according to claim 1 , wherein the second oxide semiconductor layer comprises titanium.

3. The semiconductor device according to claim 1 , wherein the second oxide semiconductor layer comprises molybdenum.

4. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.

5. The semiconductor device according to claim 1 , wherein the source and drain electrodes each comprises at least one of titanium, aluminum, manganese, magnesium, zirconium, beryllium, thorium, and copper.

6. The semiconductor device according to claim 1 , wherein each of the source electrode and the drain electrode is in direct contact with a top surface of the second oxide semiconductor layer.

7. The semiconductor device according to claim 1 ,
wherein each of the source electrode and the drain electrode comprises a titanium film, and
wherein the titanium film is in direct contact with the second oxide semiconductor layer.

8. The semiconductor device according to claim 1 , further comprising an insulating film over the source electrode and the drain electrode,
wherein an entire top surface of the first region is in contact with the insulating film.

9. A display module comprising the semiconductor device according to claim 1 , wherein the display module comprises an FPC.

10. An electronic apparatus comprising the semiconductor device according to claim 1 , wherein the electronic apparatus comprises at least one of a speaker, a battery, and an operation key.

11. A semiconductor device comprising a transistor, the transistor comprising:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a source electrode electrically connected to the second oxide semiconductor layer; and
a drain electrode electrically connected to the second oxide semiconductor layer,
wherein the first oxide semiconductor layer comprises a channel formation region,
wherein the second oxide semiconductor layer comprises a first region overlapping with the channel formation region,
wherein the second oxide semiconductor layer comprises a second region in contact with the source electrode,
wherein the second oxide semiconductor layer comprises a third region in contact with the drain electrode,
wherein the first region is located between the second region and the third region,
wherein a thickness of the first oxide semiconductor layer is larger than a thickness of the second oxide semiconductor layer,
wherein the first region has a first electrical conductivity,
wherein the second region has a second electrical conductivity,
wherein the third region has a third electrical conductivity, and
wherein the first region contains oxygen at a higher concentration than the second region and the third region.

12. The semiconductor device according to claim 11 , wherein the second oxide semiconductor layer comprises titanium.

13. The semiconductor device according to claim 11 , wherein the second oxide semiconductor layer comprises molybdenum.

14. The semiconductor device according to claim 11 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.

15. The semiconductor device according to claim 11 , wherein the source and drain electrodes each comprises at least one of titanium, aluminum, manganese, magnesium, zirconium, beryllium, thorium, and copper.

16. The semiconductor device according to claim 11 , wherein each of the source electrode and the drain electrode is in direct contact with a top surface of the second oxide semiconductor layer.

17. The semiconductor device according to claim 11 ,
wherein each of the source electrode and the drain electrode comprises a titanium film, and
wherein the titanium film is in direct contact with the second oxide semiconductor layer.

18. The semiconductor device according to claim 11 , further comprising an insulating film over the source electrode and the drain electrode,
wherein an entire top surface of the first region is in contact with the insulating film.

19. A display module comprising the semiconductor device according to claim 11 , wherein the display module comprises an FPC.

20. An electronic apparatus comprising the semiconductor device according to claim 11 , wherein the electronic apparatus comprises at least one of a speaker, a battery, and an operation key.

21. A semiconductor device comprising:
a gate electrode;
a gate insulating layer over the gate electrode;
a first oxide semiconductor layer over the gate insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a source electrode and a drain electrode over and electrically connected to the second oxide semiconductor layer,
wherein the second oxide semiconductor layer covers end portions of the first oxide semiconductor layer, and
wherein the second oxide semiconductor layer is in contact with the gate insulating layer.

22. The semiconductor device according to claim 21 , wherein the source electrode and the drain electrode comprise one or more materials selected from titanium, aluminum, manganese, magnesium, zirconium, beryllium, thorium and copper.

23. The semiconductor device according to claim 21 , wherein the source electrode and the drain electrode comprise manganese and copper.

24. The semiconductor device according to claim 21 ,
wherein the source electrode comprises a region in which a material of the source electrode is oxidized, and
wherein the drain electrode comprises a region in which a material of the drain electrode is oxidized.

25. The semiconductor device according to claim 21 , wherein a top surface of the second oxide semiconductor layer is in direct contact with the source electrode and the drain electrode.

26. The semiconductor device according to claim 21 , wherein the semiconductor device is incorporated in one selected from the group consisting of a mo

Assignees

• Semiconductor Energy Lab

Inventors

• Sakata Junichiro
• Hirohashi Takuya
• Kishida Hideyuki

Classifications

• H10P14/3426

  Oxides · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title

• H10D30/6713

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title