Semiconductor device

Patent metadata

Field	Value
Publication number	US-9324861-B2
Application number	US-201514609965-A
Country	US
Kind code	B2
Filing date	Jan 30, 2015
Priority date	Aug 30, 2012
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A semiconductor device has on a semiconductor layer: a gate insulating film formed, extending from a second emitter region toward a buffer region beyond a first body region, and covering part of a drift region; and a gate electrode. The second emitter region contacts a first emitter region, and extends laterally to a portion under the gate electrode so as to be longer than a diffusion depth of the second emitter region and not beyond a lateral length of the first body region under the gate electrode, in an area from an end portion of the first emitter region closer to the gate electrode to a region under the gate electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor layer formed above one principal surface of a supporting substrate, with a buried insulating film interposed therebetween;
a first body region of a first conductivity type formed in an upper portion of the semiconductor layer;
a drift region of a second conductivity type formed in an upper portion of the semiconductor layer to be adjacent to the first body region or apart from the first body region;
a buffer region of the second conductivity type formed in an upper portion of the drift region;
a first emitter region of the second conductivity type and a second emitter region of the second conductivity type having a concentration lower than a concentration of the first emitter region, the first emitter region and the second emitter region being formed in upper portions of the first body region;
a collector region of the first conductivity type formed in an upper portion of the buffer region;
a body contact region of the first conductivity type formed in an upper portion of the semiconductor layer such that at least part of the body contact region contacts the first body region;
a gate insulating film formed on the semiconductor layer, extending from the second emitter region toward the buffer region beyond the first body region, and covering part of the drift region, and a gate electrode formed on the gate insulating film; and
an emitter electrode contacting the first emitter region and the body contact region, and a collector electrode contacting the collector region, the emitter electrode and the collector electrode being formed on the semiconductor layer, wherein
the second emitter region contacts the first emitter region, and extends laterally to a portion under the gate electrode so as to be longer than a diffusion depth of the second emitter region and not beyond a lateral length of the first body region under the gate electrode, in an area from an end portion of the first emitter region closer to the gate electrode to a region under the gate electrode.

2. The semiconductor device of claim 1 , wherein
the diffusion depth of the second emitter region is shallower than a diffusion depth of the body contact region.

3. The semiconductor device of claim 1 , wherein
the diffusion depth of the second emitter region is shallower than a diffusion depth of the first emitter region.

4. The semiconductor device of claim 1 , wherein
a sheet resistance of the second emitter region is larger than a sheet resistance of the first body region.

5. The semiconductor device of claim 1 , wherein
a peak value of an impurity concentration of the second emitter region is in a range of one to ten times a peak value of an impurity concentration of the first body region.

6. The semiconductor device of claim 1 , wherein
a peak value of an impurity concentration of the second emitter region is in a range of 1E+18 atoms/cm 3 to 1E+19 atoms/cm 3 .

7. The semiconductor device of claim 1 , wherein
the diffusion depth of the second emitter region is in a range of 0.05 μm to 0.2 μm.

8. The semiconductor device of claim 1 , wherein
the first body region has a retrograde profile.

9. The semiconductor device of claim 1 , further comprising:
a second body region of the first conductivity type formed under the first body region so as to contact the first body region, and having a concentration lower than and a diffusion depth deeper than those of the first body region.

10. A semiconductor device, comprising:
a semiconductor layer of a second conductivity type formed above one principal surface of a supporting substrate, with a buried insulating film interposed therebetween;
a first body region of a first conductivity type formed in an upper portion of the semiconductor layer;
a buffer region of the second conductivity type formed in an upper portion of the semiconductor layer to be apart from the first body region;
a first emitter region of the second conductivity type and a second emitter region of the second conductivity type having a concentration lower than a concentration of the first emitter region, the first emitter region and the second emitter region being formed in upper portions of the first body region;
a collector region of the first conductivity type formed in an upper portion of the buffer region;
a body contact region of the first conductivity type formed in an upper portion of the semiconductor layer such that at least part of the body contact region contacts the first body region;
a gate insulating film formed on the semiconductor layer, extending from the second emitter region toward the buffer region beyond the first body region, and covering part of the semiconductor layer, and a gate electrode formed on the gate insulating film; and
an emitter electrode contacting the first emitter region and the body contact region, and a collector electrode contacting the collector region, the emitter electrode and the collector electrode being formed on the semiconductor layer, wherein
the second emitter region contacts the first emitter region, and extends laterally to a portion under the gate electrode so as to be longer than a diffusion depth of the second emitter region and not beyond a lateral length of the first body region under the gate electrode, in an area from an end portion of the first emitter region closer to the gate electrode to a region under the gate electrode.

11. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a first body region of the first conductivity type formed in an upper portion of the semiconductor substrate on one principal surface side;
a drift region of a second conductivity type formed in an upper portion of the semiconductor substrate on the one principal surface side to be adjacent to the first body region or apart from the first body region;
a buffer region of the second conductivity type formed in an upper portion of the drift region;
a first source region of the second conductivity type and a second source region of the second conductivity type having a concentration lower than a concentration of the first source region, the first source region and the second source region being formed in upper portions of the first body region;
a drain region of the second conductivity type formed in an upper portion of the buffer region;
a body contact region of the first conductivity type formed in an upper portion of the semiconductor substrate on the one principal surface side such that at least part of the body contact region contacts the first body region;
a gate insulating film formed on the semiconductor substrate, extending from the second source region toward the buffer region beyond the first body region, and covering part of the drift region, and a gate electrode formed on the gate insulating film; and
a source electrode contacting the first source region and the body contact region, and a drain electrode contacting the drain region, the source electrode and the drain electrode being formed on the semiconductor substrate, wherein
the second source region contacts the first source region, and extends laterally to a portion under the gate electrode so as to be longer than a diffusion depth of the second source region and not beyond a lateral length of the first body region under the gate electrode, in an area from an end portion of the first source region closer to the gate electrode to a region under the gate electrode.

12. The semiconductor device of claim 11 , wherein
the diffusion depth of the second source region is shallower than a diffusion depth of the body contact region.

1

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Ikuta Teruhisa
• Fukumoto Akira

Classifications

• H10D62/307

  the doping variations being parallel to the channel lengths · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D62/157

  Impurity concentrations or distributions · CPC title

• H10D62/153

  Impurity concentrations or distributions · CPC title

• H10D62/137

  Collector regions of BJTs · CPC title