Semiconductor device including a gate electrode on a protruding group III-V material layer

Patent metadata

Field	Value
Publication number	US-9324852-B2
Application number	US-201514623394-A
Country	US
Kind code	B2
Filing date	Feb 16, 2015
Priority date	Nov 15, 2011
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
at least two insulation layer portions spaced apart on the substrate;
a group III-V material layer filling the space between the insulation layer portions, and the group III-V material layer including a portion protruding higher than the insulation layer portions;
a barrier layer covering the protruding portion of the group III-V material layer;
a gate electrode on the barrier layer; and
source and drain electrodes on the group III-V material layer,
wherein the overall composition of the group III-V material layer is uniform;
wherein the protruding portion of the group III-V material layer is substantially defect-free;
wherein the source and drain electrodes physically contact the barrier layer and the gate insulation film; and
wherein the barrier layer is a group III-V compound layer.

2. The semiconductor device of claim 1 , wherein the barrier layer comprises material having a bandgap larger than a bandgap of the III-V material layer.

3. The semiconductor device of claim 1 , wherein the group III-V material layer includes an InGaAs layer.

4. The semiconductor device of claim 1 , wherein the gate insulation film comprises one of Al 2 O 3 , HfO 2 , ZrO 2 , La 2 O 3 , Gd 2 O 3 and Sc 2 O 3 .

Assignees

• Cho Young-Jin
• Kim Kyoung-Yeon
• Lee Sang-Moon
• Hong Ki-Ha
• Hwang Eui-Chul
• Samsung Electronics Co Ltd

Inventors

• Cho Young-Jin
• Kim Kyoung-Yeon
• Lee Sang-Moon
• Hong Ki-Ha
• Hwang Eui-Chul

Classifications

• H10P14/3414

  being group IIIA-VIA materials · CPC title

• H10P10/00

  Bonding of wafers, substrates or parts of devices · CPC title

• H10D64/518

  characterised by their lengths or sectional shapes · CPC title

• H10D62/8181

  Structures having no potential periodicity in the vertical direction, e.g. lateral superlattices or lateral surface superlattices [LSS] · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title