LDMOS power semiconductor device and manufacturing method of the same

Patent metadata

Field	Value
Publication number	US-9324838-B2
Application number	US-201414151527-A
Country	US
Kind code	B2
Filing date	Jan 9, 2014
Priority date	Jan 11, 2013
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.

First claim

The invention claimed is:

1. An electronic semiconductor device comprising:
a semiconductor body having a first side and a second side opposite to one another along a first direction and including a first structural region, which faces the second side and has a first conductivity; and a second structural region which extends over the first structural region, faces the first side, and has a second conductivity opposite to the first conductivity;
a body region having the second conductivity and extending in the second structural region at the first side;
a source region having the first conductivity, extending within the body region and facing the first side;
a drain region having the first conductivity and facing the first side of the semiconductor body;
a gate electrode extending over a portion of the first side of the semiconductor body between the source region and the drain region;
a first trench which extends through the second structural region and houses a trench dielectric region and a first trench conductive region; and
a second trench which extends through part of the second structural region inside the body region, said second trench housing a second trench conductive region in electrical contact with the body region and with the source region,
wherein the drain region extends through the second structural region, electrically contacts the first structural region, and is arranged between, and in direct contact with, the body region and the trench dielectric region, said first and second trench conductive regions being electrically coupled to one another.

2. The device according to claim 1 , wherein the first trench extends throughout a thickness of the second structural region and through part of the first structural region and terminates in the first structural region.

3. The device according to claim 1 , wherein the trench dielectric region extends on an inner wall and on a bottom of the first trench.

4. The device according to claim 1 , wherein the first trench conductive region extends throughout a thickness of the second structural region and is electrically insulated from the first and second structural regions by the trench dielectric region.

5. The device according to claim 1 , wherein the first trench conductive region extends only for a portion of a thickness of the second structural region and is electrically insulated from the first and second structural regions by the trench dielectric region.

6. The device according to claim 1 , wherein the trench dielectric region has a first thickness at a first depth value in the semiconductor body and a second thickness, greater than the first thickness, at a second depth value, greater than the first depth value, in the semiconductor body.

7. The device according to claim 6 , wherein the trench dielectric region furthermore has a third thickness, greater than the second thickness, at a third depth value, greater than the second depth value, in the semiconductor body.

8. The device according to claim 1 , wherein the drain region is an implanted region of a light-doped-drain type.

9. The device according to claim 1 , further comprising:
a conductive layer that electrically couples the first and second trench conductive regions to one another and extends on a top side of the gate electrode; and
a gate dielectric layer which extends over the first side of the semiconductor body between the second structural region and the gate electrode, wherein the gate electrode includes: a conductive gate region in contact with the gate dielectric layer, and an insulating gate region covering the conductive gate region and electrically insulating a top side of the conductive gate region from the conductive layer.

10. The device according to claim 1 , further comprising an enriched region, which has the second conductivity and extends in the body region, said second trench conductive region being in electrical contact with the body region via the enriched region.

11. The device according to claim 1 , further comprising a first spacer and a second spacer, which are made of dielectric material and are arranged on the first side of the semiconductor body at respective opposite sides of the gate electrode, wherein the second trench conductive region extends alongside the gate electrode, and is electrically insulated from the gate electrode by the second spacer.

12. An electronic semiconductor device comprising:
a bridge of first and second transistors in a semiconductor body having a first side and a second side opposite to one another along a first direction and including a first structural region that faces the second side and has a first conductivity, wherein the first transistor includes:
a second structural region which extends over the first structural region, faces the first side, and has a second conductivity opposite to the first conductivity;
a first body region having the second conductivity and extending in the second structural region at the first side;
a first source region having the first conductivity, extending within the first body region and facing the first side;
a first drain region having the first conductivity and facing the first side of the semiconductor body;
a first gate electrode extending over a portion of the first side of the semiconductor body between the first source region and the first drain region;
a first trench which extends through the second structural region and houses a trench dielectric region and a first trench conductive region; and
a second trench which extends through part of the second structural region inside the first body region, said second trench housing a second trench conductive region in electrical contact with the first body region and with the first source region,
wherein the first drain region extends through the second structural region, electrically contacts the first structural region, and is arranged between, and in direct contact with, the first body region and the trench dielectric region, said first and second trench conductive regions being electrically coupled to one another.

13. The device according to claim 12 , wherein the second transistor includes:
a third structural region which extends over the first structural region, faces the first side, is positioned laterally with respect to the second structural region, and has the second conductivity;
a second body region having the second conductivity and extending in the third structural region at the first side;
a second source region having the first conductivity, extending within the second body region and facing the first side;
a second drain region having the first conductivity and facing the first side of the semiconductor body;
a second gate electrode extending over a portion of the first side of the semiconductor body between the second source region and the second drain region; and
a conductive via electrically contacting the second source region and extending through the third structural region into electrical contact with the first structural region.

14. The device according to claim 12 , further comprising a metal layer contacting the second side of the semiconductor body and extending from at least a position directly below the conductive via to at least a position directly below the first drain region.

15. An electronic semiconductor device comprising:
a semiconductor body having a first side and a second side opposite to one another along a first direction and including a first structural region, which faces the second side and has a first conductivity; and a second structural region which extends over the first structural

Assignees

• St Microelectronics Srl

Inventors

• Cascino Salvatore
• Gervasi Leonardo
• Santangelo Antonello

Classifications

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10D84/016

  the components including vertical IGFETs · CPC title

• H10D64/663

  the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates · CPC title

• H10D64/254

  for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts · CPC title

• H10D64/025

  forming recessed gates, e.g. by using local oxidation · CPC title