Display device and electronic device

Patent metadata

Field	Value
Publication number	US-9324737-B2
Application number	US-201314089133-A
Country	US
Kind code	B2
Filing date	Nov 25, 2013
Priority date	Nov 28, 2012
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

To provide a novel display device. The display device includes a pixel portion, a driver circuit portion that is provided outside the pixel portion, and a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes. The pixel portion includes pixel electrodes arranged in a matrix and transistors electrically connected to the pixel electrodes. The transistor includes a first insulating layer containing nitrogen and silicon, and a second insulating layer containing oxygen, nitrogen, and silicon. The protection circuit includes the first insulating layer between the pair of electrodes.

First claim

What is claimed is:

1. A display device comprising:
a pixel portion;
a driver circuit portion that is provided outside the pixel portion; and
a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes,
wherein the pixel portion includes a transistor,
wherein the transistor includes a gate insulating layer,
wherein the gate insulating layer includes:
a first insulating layer containing nitrogen and silicon; and
a second insulating layer containing oxygen, nitrogen, and silicon, and

wherein the protection circuit includes the first insulating layer between the pair of electrodes.

2. The display device according to claim 1 ,
wherein a resistivity of the first insulating layer is greater than or equal to 10 10 Ωcm and less than 10 18 Ωcm.

3. The display device according to claim 1 ,
the transistor further comprising a semiconductor layer,
wherein the semiconductor layer of the transistor is an oxide semiconductor layer.

4. A display device comprising:
a pixel portion;
a driver circuit portion that is provided outside the pixel portion; and
a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes,
wherein the pixel portion includes:
pixel electrodes arranged in a matrix each of which is electrically connected to a transistor,

wherein each of the transistors includes:
a gate electrode;
a gate insulating layer over the gate electrode;
a semiconductor layer over the gate insulating layer;
a source electrode and a drain electrode over the semiconductor layer,

wherein the gate insulating layer includes:
a first insulating layer containing nitrogen and silicon; and
a second insulating layer containing oxygen, nitrogen, and silicon, and

wherein the protection circuit includes the first insulating layer between the pair of electrodes.

5. The display device according to claim 4 ,
wherein one of the pair of electrodes is formed over a same surface as the gate electrode, and
wherein the other of the pair of electrodes is formed over a same surface as the source electrode or the drain electrode.

6. The display device according to claim 4 ,
wherein a resistivity of the first insulating layer is greater than or equal to 10 10 Ωcm and less than 10 18 Ωcm.

7. The display device according to claim 4 ,
wherein the semiconductor layer is an oxide semiconductor layer.

8. A display device comprising:
a pixel portion; and
a protection circuit that is electrically connected to the pixel portion and includes a pair of electrodes,
wherein the pixel portion includes a transistor,
wherein the transistor includes a gate insulating layer,
wherein the gate insulating layer includes:
a first insulating layer containing nitrogen and silicon; and
a second insulating layer containing oxygen, nitrogen, and silicon, and

wherein the protection circuit includes the first insulating layer between the pair of electrodes.

9. The display device according to claim 8 , further comprising:
a gate electrode under the gate insulating layer;
a semiconductor layer over the gate insulating layer;
a source electrode and a drain electrode over the semiconductor layer,
wherein one of the pair of electrodes is formed over a same surface as the gate electrode, and
wherein the other of the pair of electrodes is formed over a same surface as the source electrode or the drain electrode.

10. The display device according to claim 8 ,
wherein a resistivity of the first insulating layer is greater than or equal to 10 10 Ωcm and less than 10 18 Ωcm.

11. The display device according to claim 3 ,
wherein the semiconductor layer comprises an oxide semiconductor containing at least indium and zinc.

12. The display device according to claim 4 ,
wherein the semiconductor layer comprises an oxide semiconductor containing at least indium and zinc.

13. The display device according to claim 8 , the transistor further comprising a semiconductor layer.

14. The display device according to claim 13 ,
wherein the semiconductor layer comprises an oxide semiconductor containing at least indium and zinc.

15. The display device according to claim 1 ,
wherein the first insulating layer is a silicon nitride film.

16. The display device according to claim 4 ,
wherein the first insulating layer is a silicon nitride film.

17. The display device according to claim 8 ,
wherein the first insulating layer is a silicon nitride film.

18. The display device according to claim 1 , further comprising a plurality of pixel electrodes,
wherein the plurality of pixel electrodes is arranged in a matrix, and
wherein one of the plurality of pixel electrodes is electrically connected to the transistor.

19. A display device comprising:
a pixel portion; and
a protection circuit that is electrically connected to the pixel portion and includes a pair of electrodes,
wherein the pixel portion includes a transistor,
wherein the transistor includes a gate insulating layer and an oxide semiconductor layer,
wherein the gate insulating layer includes:
a first insulating layer comprising silicon nitride; and
a second insulating layer comprising any one of silicon oxide and silicon oxynitride, and

wherein the protection circuit includes the first insulating layer between the pair of electrodes.

20. The display device according to claim 19 ,
wherein a resistivity of the first insulating layer is greater than or equal to 10 10 ωcm and less than 10 18 ωcm.

21. The display device according to claim 19 ,
wherein the oxide semiconductor layer comprises at least indium and zinc.

22. The display device according to claim 19 , further comprising a plurality of pixel electrodes,
wherein the plurality of pixel electrodes is arranged in a matrix, and
wherein one of the plurality of pixel electrodes is electrically connected to the transistor.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Kimura Hajime
• Miyake Hiroyuki
• Koyama Jun

Classifications

• G06F3/041

  Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title

• G09G3/20

  for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix {no fixed position being assigned to or needed to be assigned to the individual characters or partial characters} · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• G09F9/30 Primary

  in which the desired character or characters are formed by combining individual elements (panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00) · CPC title

• H10D89/931 Primary

  characterised by the dispositions of the protective arrangements · CPC title